Patent search ap:("RAYTHEON CO") AND inv:"LAVINE JEROME M" Page 1

1.

发明授权
Semiconductor devices with improved carrier injection to allow increased frequency response 失效
Title translation: 具有改进的载流子注入的半导体器件允许增加频率响应

公开(公告)号：US3091706A

公开(公告)日：1963-05-28

申请号：US2934660

申请日：1960-05-16

Applicant: RAYTHEON CO

Inventor： LAVINE JEROME M

IPC: H01L29/00 , H01L29/06 , H01L29/73

CPC classification number: H01L29/06 , H01L29/00 , H01L29/73

2.

发明授权
Circuits utilizing the threshold properties of recombination radiation semiconductor devices 失效
Title translation: 利用重组辐射半导体器件的阈值特性的电路

公开(公告)号：US3499158A

公开(公告)日：1970-03-03

申请号：US3499158D

申请日：1964-04-24

Applicant: RAYTHEON CO

Inventor： LAVINE JEROME M , CHENEY PHILIP W

IPC: G02F3/00 , H01L33/00 , H03K17/78 , H03K19/14 , H01J39/12

CPC classification number: H03K19/14 , G02F3/00 , H01L33/00 , H03K17/78

3.

发明授权
Non-thermionic electron emission devices 失效
Title translation: 非热电子发射器件

公开(公告)号：US3330991A

公开(公告)日：1967-07-11

申请号：US29455463

申请日：1963-07-12

Applicant: RAYTHEON CO

Inventor： LAVINE JEROME M , FEIST WOLFGANG M , STEELE SAMUEL R

IPC: H01J1/308 , H01L33/00

CPC classification number: H01J1/308 , H01L33/00

Patent Agency Ranking