公开(公告)号：US3855613A

公开(公告)日：1974-12-17

申请号：US37264873

申请日：1973-06-22

Applicant: RCA CORP

Inventor： NAPOLI L ,  DEAN R

IPC: H01L29/80 ,  H01L21/00 ,  H01L21/337 ,  H01L29/00 ,  H01L29/207 ,  H01L29/45 ,  H01L29/808 ,  H01L11/00 ,  H01L15/00

CPC classification number: H01L29/452 ,  H01L21/00 ,  H01L29/00 ,  H01L29/207

Abstract: The transistor is especially useful for high frequency switching applications. A conductive path between ohmic contacts will pass high frequency signals with very little impedance. The conductive path is comprised of a doped semiconductor layer of one conductivity type to which ohmic contacts are attached. The substrate of the device which underlies the layer is heavily doped with deep impurities of opposite conductivity type so that it has a high resistivity. The high resistivity of the substrate isolates the driving voltage used to switch the device from the signal passed between the ohmic contacts. The device can be turned ''''OFF'''' by reverse biasing the PN junction formed between the substrate and the layer. This is accomplished by imposing a driver voltage between one of the ohmic contacts and a metallic contact connected to the substrate.

Abstract translation: 晶体管特别适用于高频开关应用。 欧姆接触之间的导电路径将传递非常小的阻抗的​​高频信号。 导电路径由一个导电类型的掺杂半导体层组成，欧姆接触器连接到该掺杂半导体层。 在层下面的器件的衬底被重掺杂有相反导电类型的深度杂质，使得其具有高电阻率。 衬底的高电阻率将用于切换器件的驱动电压与通过欧姆接触之间的信号隔离。 通过反向偏置衬底和层之间形成的PN结，该器件可以被“关闭”。 这通过在一个欧姆接触件和连接到基板的金属触点之间施加驱动电压来实现。