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    Coaxial magnetic slug tuner
    2.
    发明授权
    Coaxial magnetic slug tuner 失效
    同轴磁力调节器

    公开(公告)号：US3792385A

    公开(公告)日：1974-02-12

    申请号：US3792385D

    申请日：1972-11-06

    Applicant: RCA CORP

    Inventor： NAPOLI L ,  HUGHES J

    IPC: H01P5/04 ,  H01P1/00

    CPC classification number: H01P5/04

    Abstract: A movable magnetic tuning slug capacitively coupled to both the center conductor and outer conductor of an electromagnetic transmission line is used to provide a desired transmission line impedance in response to an applied magnetic field.

    Abstract translation: 使用电容耦合到电磁传输线的中心导体和外导体的可移动磁调节段，以响应所施加的磁场提供期望的传输线阻抗。

    Microwave transmission line and devices using multiple coplanar conductors
    3.
    发明授权
    Microwave transmission line and devices using multiple coplanar conductors 失效
    MICROWAVE传输线和使用多个共模导线器的器件

    公开(公告)号：US3848198A

    公开(公告)日：1974-11-12

    申请号：US40155373

    申请日：1973-09-27

    Applicant: RCA CORP

    Inventor： DE BRECHT R ,  NAPOLI L

    IPC: H01P5/18 ,  H03F3/60

    CPC classification number: H01P5/18

    Abstract: Three coplanar conductive surfaces on the top surface of a dielectric substrate form a microwave transmission line having first and second transmission modes used in the construction and operation of various microwave devices, such as amplifiers and directional couplers.

    Abstract translation: 电介质基片的顶表面上的三个共面导电表面形成微波传输线，其具有用于各种微波器件（例如放大器和定向耦合器）的构造和操作中的第一和第二传输模式。

    Microwave transmission line and devices using multiple coplanar conductors
    5.
    发明授权
    Microwave transmission line and devices using multiple coplanar conductors 失效
    MICROWAVE传输线和使用多个共模导线器的器件

    公开(公告)号：US3835421A

    公开(公告)日：1974-09-10

    申请号：US40155473

    申请日：1973-09-27

    Applicant: RCA CORP

    Inventor： DE BRECHT R ,  NAPOLI L

    IPC: H01P5/18 ,  H01P5/10 ,  H03H7/42

    CPC classification number: H01P5/18

    Abstract: Three coplanar conductive surfaces on the top surface of a dielectric substrate form a microwave transmission line having first and second transmission modes used in the construction and operation of various microwave devices, such as amplifiers unbalanced-to balanced transmission line transformers and directional couplers.

    Abstract translation: 电介质基片的顶表面上的三个共面导电表面形成微波传输线，该微波传输线具有用于各种微波器件的构造和操作的第一和第二传输模式，例如放大器不平衡到平衡的传输线变压器和定向耦合器。

    Frequency translator circuit
    6.
    发明授权
    Frequency translator circuit 失效
    频率转换器电路

    公开(公告)号：US3731180A

    公开(公告)日：1973-05-01

    申请号：US3731180D

    申请日：1972-03-13

    Applicant: RCA CORP

    Inventor： NAPOLI L ,  HUGHES J

    IPC: H03B19/05 ,  H03B19/18 ,  H02M5/30 ,  H01P3/08

    CPC classification number: H03B19/18 ,  H02M2007/4818 ,  Y02B70/1441

    Abstract: The reactance of an active element exhibiting a nonlinear current-voltage characteristic in response to an applied input signal and generating an output signal at a desired frequency is incorporated as part of a circuit resonant at both the frequency of the applied input signal and of the output signal.

    Abstract translation: 响应于所施加的输入信号而产生非线性电流 - 电压特性并产生期望频率的输出信号的有源元件的电抗被并入作为施加的输入信号和输出的频率的电路谐振的一部分 信号。

    Method of making semiconductor devices
    7.
    发明授权
    Method of making semiconductor devices 失效
    制造半导体器件的方法

    公开(公告)号：US3716429A

    公开(公告)日：1973-02-13

    申请号：US3716429D

    申请日：1970-06-18

    Applicant: RCA CORP

    Inventor： NAPOLI L ,  HUGHES J

    IPC: H01L21/00 ,  H01L21/308 ,  H01L29/00 ,  H01L7/00

    CPC classification number: H01L21/00 ,  H01L21/3081 ,  H01L21/3086 ,  H01L29/00 ,  Y10S148/051 ,  Y10S438/944 ,  Y10S438/977

    Abstract: Semiconductor devices having thin bodies of a semiconductor material are made from a wafer of the semiconductor material which is thicker than the bodies of the devices. The thicker wafer is provided with spaced thinner portions of the desired area and thickness of the bodies of the devices to be formed by etching recesses in one surface of the wafer. The recesses are formed with flat bottoms which are of the desired area of the bodies of the devices. A masking layer is coated on the bottom of each of the recesses. The active region of each of the devices is formed at the other surface of the wafer over each of the recesses. The semiconductor material between the thin portions of the wafer is then removed by etching the wafer from the one surface of the wafer so as to separate the thin portions of the wafer to form the individual devices. During the last etching process the masking layers on the bottom of the recess protect the thin portions of the wafer from being etched.

    Abstract translation: 具有薄半导体材料的半导体器件由半导体材料的晶片制成，该晶片比器件的主体更厚。 较厚的晶片设置有通过蚀刻晶片的一个表面中的凹槽而形成的器件主体的所需区域和厚度的间隔的较薄部分。 凹部形成有平坦的底部，其具有装置的主体的期望区域。 掩模层涂覆在每个凹部的底部。 每个器件的有源区域形成在每个凹槽上的晶片的另一个表面上。 然后通过从晶片的一个表面蚀刻晶片来移除晶片的薄部分之间的半导体材料，以便分离晶片的薄部分以形成各个器件。 在最后的蚀刻工艺期间，凹部底部的掩模层保护晶片的薄部分不被蚀刻。

    A solid state switch using an improved junction field effect transistor
    8.
    发明授权
    A solid state switch using an improved junction field effect transistor 失效
    使用改进的连接场效应晶体管的固态开关

    公开(公告)号：US3855613A

    公开(公告)日：1974-12-17

    申请号：US37264873

    申请日：1973-06-22

    Applicant: RCA CORP

    Inventor： NAPOLI L ,  DEAN R

    IPC: H01L29/80 ,  H01L21/00 ,  H01L21/337 ,  H01L29/00 ,  H01L29/207 ,  H01L29/45 ,  H01L29/808 ,  H01L11/00 ,  H01L15/00

    CPC classification number: H01L29/452 ,  H01L21/00 ,  H01L29/00 ,  H01L29/207

    Abstract: The transistor is especially useful for high frequency switching applications. A conductive path between ohmic contacts will pass high frequency signals with very little impedance. The conductive path is comprised of a doped semiconductor layer of one conductivity type to which ohmic contacts are attached. The substrate of the device which underlies the layer is heavily doped with deep impurities of opposite conductivity type so that it has a high resistivity. The high resistivity of the substrate isolates the driving voltage used to switch the device from the signal passed between the ohmic contacts. The device can be turned ''''OFF'''' by reverse biasing the PN junction formed between the substrate and the layer. This is accomplished by imposing a driver voltage between one of the ohmic contacts and a metallic contact connected to the substrate.

    Abstract translation: 晶体管特别适用于高频开关应用。 欧姆接触之间的导电路径将传递非常小的阻抗的​​高频信号。 导电路径由一个导电类型的掺杂半导体层组成，欧姆接触器连接到该掺杂半导体层。 在层下面的器件的衬底被重掺杂有相反导电类型的深度杂质，使得其具有高电阻率。 衬底的高电阻率将用于切换器件的驱动电压与通过欧姆接触之间的信号隔离。 通过反向偏置衬底和层之间形成的PN结，该器件可以被“关闭”。 这通过在一个欧姆接触件和连接到基板的金属触点之间施加驱动电压来实现。

    Semiconductor devices having closely spaced contacts
    10.
    发明授权
    Semiconductor devices having closely spaced contacts 失效
    具有闭合间隔触点的半导体器件

    公开(公告)号：US3764865A

    公开(公告)日：1973-10-09

    申请号：US3764865D

    申请日：1970-03-17

    Applicant: RCA CORP

    Inventor： NAPOLI L ,  REICHERT W

    IPC: H01L21/00 ,  H01L29/00 ,  H01L29/41 ,  H01L11/00 ,  H01L15/00

    CPC classification number: H01L29/00 ,  H01L21/00 ,  H01L29/41 ,  Y10S148/139 ,  Y10S148/143 ,  Y10S438/944

    Abstract: A semiconductor device having at least two contacts on a body of semiconductor material. One of the contacts is in a plane spaced from the plane of the other contacts and the edges of the one contact are in substantial alignment with the adjacent edges of the other contacts. The material under either the edges of the one contact or the adjacent edges of the other contacts is removed so that such edges project in cantilever fashion beyond the material under the respective contact.

    Abstract translation: 一种在半导体材料体上具有至少两个触点的半导体器件。 触点之一在与其他触点的平面间隔开的平面中，并且一个触点的边缘与其它触点的相邻边缘基本对准。 在一个触点的边缘或其他触点的相邻边缘之下的材料被去除，使得这些边缘以悬臂的方式突出超过相应触点下面的材料。

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