公开(公告)号：US3872325A

公开(公告)日：1975-03-18

申请号：US40718373

申请日：1973-10-17

Applicant: RCA CORP

Inventor： ADAMS MELVIN EDWARD ,  FERYSZKA RUBIN

IPC: H04B1/18 ,  H03J5/24 ,  H03K17/687 ,  H03K17/60

CPC classification number: H03J5/244 ,  H03K17/687

Abstract: An insulated gate field effect transistor (IGFET) is used selectively to connect a source of radio frequency (e.g., VHF) signal to means for utilizing the radio frequency signal. First and second gate potentials are selectably applied to the IGFET to render its channel conductive and non-conductive, respectively. The first potential is applied from a source impedance appreciably higher than the reactance of the gate-to-channel capacitance of the IGFET for radio frequency signal. This prevents a distributed RC transmission line effect in the IGFET introducing reflections back to the source of radio frequency signals when the IGFET channel is conductive. The second potential is applied from a source impedance appreciably lower than the reactance of the gate-to-source and gate-to-drain capacitances of the IGFET for radio frequency signal, to reduce feedthrough of radio frequency signal when the channel is nonconductive.

Abstract translation: 选择性地使用绝缘栅场效应晶体管（IGFET）将射频源（例如，VHF）信号连接到利用射频信号的装置。 第一和第二栅极电位可选地应用于IGFET，以分别使其沟道导通和不导通。 第一个电位从源极阻抗明显高于用于射频信号的IGFET的栅极 - 沟道电容的电抗。 这防止当IGFET通道导通时，IGFET中的分布式RC传输线效应将反射引入射频信号源。 第二个电位从源极阻抗明显低于用于射频信号的IGFET的栅极 - 源极和栅极 - 漏极电容的电抗，以减少当通道不导通时射频信号的馈通 。