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公开(公告)号:US3519741A
公开(公告)日:1970-07-07
申请号:US3519741D
申请日:1967-06-12
Applicant: RCA CORP
Inventor: KNIGHT MARK BERWYN
CPC classification number: H04N3/185
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公开(公告)号:US3619666A
公开(公告)日:1971-11-09
申请号:US3619666D
申请日:1969-05-16
Applicant: RCA CORP
Inventor: AHMED ADEL ABDEL AZIZ , KNIGHT MARK BERWYN
IPC: H03K3/2893 , H03K3/15
CPC classification number: H03K3/2893
Abstract: A trigger circuit is disclosed of a type which can be constructed using integrated, semiconductor chip technology and which includes a thresholding circuit arranged to fix the triggering voltages thereof, whereby a large number of trigger circuits having uniform triggering voltages from chip-to-chip may be produced.
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公开(公告)号:US3863169A
公开(公告)日:1975-01-28
申请号:US43437574
申请日:1974-01-18
Applicant: RCA CORP
Inventor: KNIGHT MARK BERWYN
CPC classification number: H03F3/3083 , H01L2924/0002 , H03F3/30 , H01L2924/00
Abstract: A circuit exhibiting the characteristics of a transistor suited for use in a quasi-complementary push-pull amplifier uses input and output transistors of the same conductivity type. The ''''base'''' electrode of the composite transistor is at the emitter electrode of the input transistor, operated as a common-base amplifier. The collector electrode of the input transistor is coupled by a current mirror amplifier to the base electrode of the output transistor. The ''''emitter'''' electrode of the composite transistor is at the joined base electrode of the input transistor and the collector electrode of the output transistor. The ''''collector'''' electrode of the composite transistor is at the emitter electrode of the output transistor. The current gain of the composite transistor can be made to be equal to that of the output transistor, although the apparent conductivity type of the composite device is opposite to that of the input and the output transistors.
Abstract translation: 具有适用于准互补推挽放大器的晶体管特性的电路使用相同导电类型的输入和输出晶体管。 复合晶体管的“基极”电极位于输入晶体管的发射极,作为共基放大器工作。 输入晶体管的集电极通过电流镜放大器耦合到输出晶体管的基极。 复合晶体管的“发射极”电极位于输入晶体管的接合基极和输出晶体管的集电极之间。 复合晶体管的“集电极”电极位于输出晶体管的发射极。 复合晶体管的电流增益可以与输出晶体管的电流增益相同,尽管复合器件的表观导电类型与输入晶体管和输出晶体管的表观传导率相反。
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