Trigger circuits having uniform triggering voltages
    4.
    发明授权
    Trigger circuits having uniform triggering voltages 失效
    具有均匀触发电压的触发电路

    公开(公告)号:US3619666A

    公开(公告)日:1971-11-09

    申请号:US3619666D

    申请日:1969-05-16

    Applicant: RCA CORP

    CPC classification number: H03K3/2893

    Abstract: A trigger circuit is disclosed of a type which can be constructed using integrated, semiconductor chip technology and which includes a thresholding circuit arranged to fix the triggering voltages thereof, whereby a large number of trigger circuits having uniform triggering voltages from chip-to-chip may be produced.

    Composite transistor circuit
    5.
    发明授权
    Composite transistor circuit 失效
    复合晶体管电路

    公开(公告)号:US3863169A

    公开(公告)日:1975-01-28

    申请号:US43437574

    申请日:1974-01-18

    Applicant: RCA CORP

    CPC classification number: H03F3/3083 H01L2924/0002 H03F3/30 H01L2924/00

    Abstract: A circuit exhibiting the characteristics of a transistor suited for use in a quasi-complementary push-pull amplifier uses input and output transistors of the same conductivity type. The ''''base'''' electrode of the composite transistor is at the emitter electrode of the input transistor, operated as a common-base amplifier. The collector electrode of the input transistor is coupled by a current mirror amplifier to the base electrode of the output transistor. The ''''emitter'''' electrode of the composite transistor is at the joined base electrode of the input transistor and the collector electrode of the output transistor. The ''''collector'''' electrode of the composite transistor is at the emitter electrode of the output transistor. The current gain of the composite transistor can be made to be equal to that of the output transistor, although the apparent conductivity type of the composite device is opposite to that of the input and the output transistors.

    Abstract translation: 具有适用于准互补推挽放大器的晶体管特性的电路使用相同导电类型的输入和输出晶体管。 复合晶体管的“基极”电极位于输入晶体管的发射极,作为共基放大器工作。 输入晶体管的集电极通过电流镜放大器耦合到输出晶体管的基极。 复合晶体管的“发射极”电极位于输入晶体管的接合基极和输出晶体管的集电极之间。 复合晶体管的“集电极”电极位于输出晶体管的发射极。 复合晶体管的电流增益可以与输出晶体管的电流增益相同,尽管复合器件的表观导电类型与输入晶体管和输出晶体管的表观传导率相反。

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