公开(公告)号：US3894872A

公开(公告)日：1975-07-15

申请号：US48945674

申请日：1974-07-17

Applicant: RCA CORP

Inventor： MITCHELL JR JOSEPH ,  CARR JR LESTER ANDREW

IPC: C08F14/00 ,  H01G4/06 ,  C23C11/00 ,  H01G1/00 ,  H01G13/00

CPC classification number: H01G4/08 ,  Y10S438/977 ,  Y10T29/435

Abstract: A process for making an MIM (metal-insulator-metal) capacitor comprising thermally depositing or growing a dielectric on a silicon substrate, depositing an electrode on the dielectric, removing the silicon substrate, thereby exposing the dielectric, and depositing a second electrode on the exposed dielectric is disclosed.

Abstract translation: 一种用于制造MIM（金属 - 绝缘体 - 金属）电容器的方法，包括在硅衬底上热沉积或生长电介质，在电介质上沉积电极，去除硅衬底，从而暴露电介质，并将第二电极沉积在 公开了电介质。