公开(公告)号：US3876472A

公开(公告)日：1975-04-08

申请号：US46111174

申请日：1974-04-15

Applicant: RCA CORP

Inventor： POLINSKY MURRAY ARTHUR

IPC: H01L21/00 ,  H01L21/225 ,  H01L21/265 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78 ,  H01L7/54

CPC classification number: H01L21/8238 ,  H01L21/00 ,  H01L21/2253

Abstract: A method of achieving semiconductor substrates having similar surface resistivity comprises implanting ions into semiconductor substrates of very high resistivity and then, preferably, subjecting the substrates to a drive-in diffusion. This method can be utilized in the manufacture of CMOS integrated circuits to achieve transistors having closely matched threshold voltages.

公开(公告)号：US3898107A

公开(公告)日：1975-08-05

申请号：US42085873

申请日：1973-12-03

Applicant: RCA CORP

Inventor： POLINSKY MURRAY ARTHUR

IPC: H01L21/8222 ,  H01L21/8238 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/78 ,  H01L29/72 ,  H01L21/00 ,  H01L27/02

CPC classification number: H01L27/0623 ,  H01L21/823878 ,  H01L21/8249 ,  Y10S148/037 ,  Y10S148/085 ,  Y10S148/151

Abstract: Complementary insulated gate field effect transistors are made compatibly with bipolar transistors in a junction-isolated integrated circuit device by a process which includes the simultaneous redistribution of conductivity modifiers in a well region for an insulated gate field effect transistor and in the isolation regions of the device.

Abstract translation: 互补绝缘栅场效应晶体管与结隔离集成电路器件中的双极晶体管兼容，该方法包括在绝缘栅场效应晶体管的阱区和器件的隔离区中同时重新分配导电性改进剂 。