公开(公告)号：US3720925A

公开(公告)日：1973-03-13

申请号：US3720925D

申请日：1970-10-19

Applicant: RCA CORP

Inventor： ROSS E

IPC: G11C16/04 ,  G11C7/00 ,  G11C11/40

CPC classification number: G11C16/0466

Abstract: A word-organized memory array employing at each storage location only a single metal-insulator-semiconductor device. Information is written into selected devices by causing them to assume either a high or a low voltage threshold state while non-selected devices are undisturbed. During the write cycle, the source and drain electrodes of each element are maintained at the same potential having either a first or a second value whereby there is no steady state current flowing through the devices and no steady state power dissipation on the memory array.

Abstract translation: 在每个存储位置处采用单个金属 - 绝缘体 - 半导体器件的单词组织的存储器阵列。 信息被写入所选择的器件，使其在高电平或低电压阈值状态下被占用，而未选择的器件不受干扰。 在写周期期间，每个元件的源电极和漏电极被保持在具有第一或第二值的相同电位，由此不存在流过器件的稳态电流，并且在存储器阵列上没有稳态功率耗散。

公开(公告)号：US3781570A

公开(公告)日：1973-12-25

申请号：US3781570D

申请日：1971-11-22

Applicant: RCA CORP

Inventor： ROSS E

IPC: G11C17/00 ,  G11C16/04 ,  G11C19/18 ,  G11C19/28 ,  H03K19/096 ,  G11C11/40

CPC classification number: G11C19/184 ,  G11C19/28

Abstract: A storage circuit includes in each stage a metal-nitride-oxidesemiconductor (MNOS) transistor whose threshold voltage is electrically alterable. When the transistors are all at the same threshold level, data bits may be dynamically loaded and stored in the circuit. These bits thereafter may be statically stored by retaining the MNOS transistor of a stage at its original threshold level if the bit stored in that stage is of one binary value and by placing the MNOS transistor at its other threshold level if the bit stored is of the other binary value.

公开(公告)号：US3713111A

公开(公告)日：1973-01-23

申请号：US3713111D

申请日：1970-12-14

Applicant: RCA CORP

Inventor： ROSS E

IPC: G11C16/04 ,  H03K3/356 ,  H03K17/687 ,  G11C11/34 ,  G11C11/40

CPC classification number: H03K17/6872 ,  G11C16/0466 ,  H03K3/356008

Abstract: Means for cycling a variable threshold field-effect semiconductor memory device to one selected threshold level and then to another selected threshold level before each write operation to minimize a shift in the selected threshold levels.

Abstract translation: 用于将可变阈值场效应半导体存储器件循环到一个所选阈值水平，然后在每次写入操作之前到另一个选择的阈值电平的装置，以最小化所选阈值电平的偏移。