Abstract:
A METHOD FOR MAKING A NEGATIVE EFFECTIVE-ELECTRONAFFINITY SILICON ELECTRON EMITTER INCLUDES THE STEPS OF PREPARING THE SILICON BY FIRST HEATING FOR A SHORT TIME TO NEAR THE MELTING POINT OF THE SILICON, SENSITIZING BY APPLYING A LAYER OF WORK-FUNCTION-REDUCING MATERIAL, HEATING AGAIN FOR A SHORT TIME TO A LOWER TEMPERATURE THAN THE FIRST AND AGAINST SENSITIZING BY APPLYING A LAYER OF WORK-FUNCTION-REDUCING MATERIAL.
Abstract:
In an electron emissive device having electron multiplying dynodes, the dynode surfaces upon which the electrons impinge are provided with a layer of antimony activated with cesium and potassium.
Abstract:
A method comprising coating an uncontaminated emitter surface of an emitter body with a non-contaminating protective layer and then mounting the body so that the coated surface is in the interior of an envelope. The envelope and body are then heated to a first temperature to drive contaminant gases from surfaces of the envelope interior while these gases are simultaneously pumped out. The first temperature is low enough that the protective layer remains. Then the body is heated to a second temperature, higher than the first, and the protective layer evaporated off the surface while the envelope is maintained at a temperature below the first temperature. Thereafter the emitter surface is activated by the application thereto of a material which lowers the work function.