公开(公告)号：US3727116A

公开(公告)日：1973-04-10

申请号：US3727116D

申请日：1970-05-05

Applicant: RCA CORP

Inventor： GREENBERG L ,  THOMAS A ,  NEILSON J

IPC: H01L21/00 ,  H01L27/06 ,  H01L29/74 ,  H01L29/861 ,  H01L17/00

CPC classification number: H01L29/861 ,  H01L21/00 ,  H01L27/0688 ,  H01L29/7416

Abstract: A semiconductor switching device comprising a silicon controlled rectifier (SCR) and a diode rectifier integrally connected in parallel with the SCR in a single semiconductor body. The device is of the NPNP or PNPN type, having gate, cathode, and anode electrodes. A portion of each intermediate N and P region makes ohmic contact to the respective anode or cathode electrode of the SCR. In addition, each intermediate region includes a highly conductive edge portion. These portions are spaced from the adjacent external regions by relatively low conductive portions, and limit the conduction of the diode rectifier to the periphery of the device. A profile of gold recombination centers further electrically isolates the central SCR portion from the peripheral diode portion.

Abstract translation: 一种半导体开关器件，包括在单个半导体器件中与SCR并联连接的可控硅整流器（SCR）和二极管整流器。 该器件具有NPNP或PNPN型，具有栅极，阴极和阳极电极。 每个中间体N和P区的一部分与SCR的相应阳极或阴极发生欧姆接触。 此外，每个中间区域包括高导电性边缘部分。 这些部分通过相对低的导电部分与相邻的外部区域间隔开，并且限制二极管整流器到器件的周边的导通。 金复合中心的轮廓进一步将中央SCR部分与外围二极管部分电隔离。