公开(公告)号：US12046623B2

公开(公告)日：2024-07-23

申请号：US17395794

申请日：2021-08-06

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Francis Joseph Kumar ,  Michael K. Jackson ,  Pramodha Marthandam

IPC: H01L31/00 ,  A61B6/03 ,  H01L27/146

CPC classification number: H01L27/14659 ,  A61B6/032 ,  H01L27/14696 ,  H01L27/14698

Abstract: A radiation detector tile includes a single crystal compound semiconductor tile having a zinc blende crystal structure, a (111) plane first major (i.e. prominent) surface and four side surfaces which are rotated by an angle of 13° to 17° to a {110} family of planes. The tile may be formed by dicing a (111) oriented wafer at directions which are rotated by an angle of 13° to 17° from in-plane slipping directions to reduce or eliminate the side surface chipping and sub surface dislocation defects.

公开(公告)号：US12094988B1

公开(公告)日：2024-09-17

申请号：US17807957

申请日：2022-06-21

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： James Balcom ,  Jason MacKenzie ,  Francis Joseph Kumar ,  Krzysztof Iniewski ,  Michael K. Jackson ,  Yuxin Song

IPC: H01L31/0272 ,  H01L31/0288 ,  H01L31/08 ,  H01L31/109

CPC classification number: H01L31/0272 ,  H01L31/0288 ,  H01L31/085 ,  H01L31/109

Abstract: An ionizing radiation detector includes a p-type semiconductor single crystal substrate having first and second major planar opposing surfaces, where the p-type semiconductor single crystal substrate is doped with n-type dopant atoms, and where a concentration of deep level acceptor defects is greater than a concentration of the n-type dopant atoms in the p-type semiconductor single crystal substrate; a cathode electrode on the first major planar opposing surface of the p-type semiconductor single crystal substrate, and a plurality of anode electrodes on the second major planar opposing surface of the p-type semiconductor single crystal substrate.

公开(公告)号：US11733408B2

公开(公告)日：2023-08-22

申请号：US17225416

申请日：2021-04-08

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Krzysztof Iniewski ,  Michael K. Jackson ,  Michael Ayukawa

IPC: G01T1/29 ,  H01L27/146

CPC classification number: G01T1/2928 ,  H01L27/1463 ,  H01L27/14658 ,  H01L27/14696

Abstract: A radiation detector includes a semiconductor layer having opposing first and second surfaces, anodes disposed over the first surface of the semiconductor layer in a pixel pattern, a cathode disposed over the second surface of the semiconductor layer, and an electrically conductive pattern disposed over the first surface of the semiconductor layer in interpixel gaps between the anodes. At least a portion of the electrically conductive pattern is not electrically connected to an external bias source.

公开(公告)号：US11378701B2

公开(公告)日：2022-07-05

申请号：US17064089

申请日：2020-10-06

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Saeid Taherion ,  Michael K. Jackson

IPC: G01T1/24 ,  H01L27/146 ,  H01L31/09 ,  G01T1/17

Abstract: A radiation sensor includes a radiation-sensitive semiconductor layer, a cathode electrode disposed over a front side of the radiation-sensitive semiconductor layer that is configured to be exposed to radiation, at least one anode electrode disposed over a backside of the radiation-sensitive semiconductor layer, and a potential barrier layer located between the cathode electrode and the front side of the radiation-sensitive semiconductor layer.

公开(公告)号：US20220107431A1

公开(公告)日：2022-04-07

申请号：US17064089

申请日：2020-10-06

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Saeid TAHERION ,  Michael K. Jackson

IPC: G01T1/24 ,  H01L27/146

Abstract: A radiation sensor includes a radiation-sensitive semiconductor layer, a cathode electrode disposed over a front side of the radiation-sensitive semiconductor layer that is configured to be exposed to radiation, at least one anode electrode disposed over a backside of the radiation-sensitive semiconductor layer, and a potential barrier layer located between the cathode electrode and the front side of the radiation-sensitive semiconductor layer.