公开(公告)号：US12046623B2

公开(公告)日：2024-07-23

申请号：US17395794

申请日：2021-08-06

申请人： REDLEN TECHNOLOGIES, INC.

发明人： Francis Joseph Kumar ,  Michael K. Jackson ,  Pramodha Marthandam

IPC分类号： H01L31/00 ,  A61B6/03 ,  H01L27/146

CPC分类号： H01L27/14659 ,  A61B6/032 ,  H01L27/14696 ,  H01L27/14698

摘要： A radiation detector tile includes a single crystal compound semiconductor tile having a zinc blende crystal structure, a (111) plane first major (i.e. prominent) surface and four side surfaces which are rotated by an angle of 13° to 17° to a {110} family of planes. The tile may be formed by dicing a (111) oriented wafer at directions which are rotated by an angle of 13° to 17° from in-plane slipping directions to reduce or eliminate the side surface chipping and sub surface dislocation defects.

公开(公告)号：US10983372B2

公开(公告)日：2021-04-20

申请号：US16035801

申请日：2018-07-16

申请人： REDLEN TECHNOLOGIES, INC.

发明人： Francis Joseph Kumar ,  Saied Taherion ,  David Giles ,  Jason MacKenzie

IPC分类号： G02F1/03 ,  H01L33/32 ,  H01L33/50 ,  H01L33/44 ,  H01L21/02 ,  H01L31/0216 ,  H01L33/36 ,  G02F1/015 ,  H01L31/0232 ,  G02F2/02 ,  H01L33/00 ,  G02F1/00 ,  G02F1/35 ,  G02F1/355 ,  H01L33/02 ,  H01L31/02 ,  H01L31/0224 ,  H01L27/146 ,  G02F1/01 ,  G02F1/017

摘要： An electro-optic modulator includes a doped semiconductor crystal having a crystallographic surface having an amplitude modulation orientation, a first metal electrode located on a first surface of the doped semiconductor crystal, a second metal electrode located on a second surface of the doped semiconductor crystal, and accumulation space charge regions located within surface regions of the doped semiconductor crystal that are proximal to the first metal electrode and the second metal electrode and including excess charge carriers of a same type as majority charge carriers of the doped semiconductor crystal.

公开(公告)号：US12094988B1

公开(公告)日：2024-09-17

申请号：US17807957

申请日：2022-06-21

申请人： REDLEN TECHNOLOGIES, INC.

发明人： James Balcom ,  Jason MacKenzie ,  Francis Joseph Kumar ,  Krzysztof Iniewski ,  Michael K. Jackson ,  Yuxin Song

IPC分类号： H01L31/0272 ,  H01L31/0288 ,  H01L31/08 ,  H01L31/109

CPC分类号： H01L31/0272 ,  H01L31/0288 ,  H01L31/085 ,  H01L31/109

摘要： An ionizing radiation detector includes a p-type semiconductor single crystal substrate having first and second major planar opposing surfaces, where the p-type semiconductor single crystal substrate is doped with n-type dopant atoms, and where a concentration of deep level acceptor defects is greater than a concentration of the n-type dopant atoms in the p-type semiconductor single crystal substrate; a cathode electrode on the first major planar opposing surface of the p-type semiconductor single crystal substrate, and a plurality of anode electrodes on the second major planar opposing surface of the p-type semiconductor single crystal substrate.