公开(公告)号：US20160240584A1

公开(公告)日：2016-08-18

申请号：US15014707

申请日：2016-02-03

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Uri EL-HANANY ,  Adam DENSMORE ,  Saeid TAHERION ,  Georgios PREKAS ,  Veeramani PERUMAL

IPC: H01L27/146 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L27/14696 ,  H01L27/14658 ,  H01L27/14661 ,  H01L27/14687 ,  H01L27/14698 ,  H01L31/022408 ,  H01L31/1832

Abstract: A method of fabricating a solid state radiation detector method includes mechanically lapping and polishing the first and the second surfaces of a semiconductor wafer using a plurality of lapping and polishing steps. The method also includes growing passivation oxide layers by use of oxygen plasma on the top of the polished first and second surfaces in order to passivate the semiconductor wafer. Anode contacts are deposited and patterned on top of the first passivation oxide layer, which is on top of the first surface. Cathode contacts, which are either monolithic or patterned, are deposited on top of the second passivation oxide layer, which is on the second surface. Aluminum nitride encapsulation layer can be deposited over the anode contacts and patterned to encapsulate the first passivation oxide layer, while physically exposing a center portion of each anode contact to electrically connect the anode contacts.

Abstract translation: 制造固态放射线检测器方法的方法包括使用多个研磨和抛光步骤对半导体晶片的第一和第二表面进行机械研磨和抛光。 该方法还包括通过在抛光的第一和第二表面的顶部上使用氧等离子体来生长钝化氧化物层，以钝化半导体晶片。 在第一钝化氧化物层的顶部沉积阳极接触并将其图案化，其位于第一表面的顶部。 单片或图案化的阴极触点沉积在位于第二表面上的第二钝化氧化物层的顶部上。 氮化铝封装层可以沉积在阳极触点上并被图案化以封装第一钝化氧化物层，同时物理地暴露每个阳极触点的中心部分以电连接阳极触点。