公开(公告)号：US20230215784A1

公开(公告)日：2023-07-06

申请号：US18182780

申请日：2023-03-13

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Masahiro MATSUMOTO ,  Masahiko FUJISAWA ,  Akihiko OSAKI ,  Atsushi ISHII

IPC: H01L23/532 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L23/53295 ,  H01L23/5226 ,  H01L21/768

Abstract: A preferred aim of the invention is to provide technique for improving reliability of semiconductor devices when using a low-dielectric-constant film having a lower dielectric constant than a silicon oxide film to a part of an interlayer insulating film. More specifically, to achieve the preferred aim, an interlayer insulating film IL1 forming a first fine layer is formed of a middle-Young's-modulus film, and thus it is possible to separate an integrated high-Young's-modulus layer (a semiconductor substrate 1S and a contact interlayer insulating film CIL) and an interlayer insulating film (a low-Young's-modulus film; a low-dielectric-constant film) IL2 forming a second fine layer not to let them directly contact with each other, and stress can be diverged. As a result, film exfoliation of the interlayer insulating film IL2 formed of a low-Young's-modulus film can be prevented and thus reliability of semiconductor devices can be improved.

公开(公告)号：US20200211931A1

公开(公告)日：2020-07-02

申请号：US16811846

申请日：2020-03-06

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Masahiro MATSUMOTO ,  Masahiko FUJISAWA ,  Akihiko OSAKI ,  Atsushi ISHII

IPC: H01L23/495 ,  H01L21/768 ,  H01L23/00 ,  H01L23/532 ,  H01L23/31

Abstract: A preferred aim of the invention is to provide technique for improving reliability of semiconductor devices when using a low-dielectric-constant film having a lower dielectric constant than a silicon oxide film to apart of an interlayer insulating film. More specifically, to achieve the preferred aim, an interlayer insulating film IL1 forming a first fine layer is formed of a middle-Young's-modulus film, and thus it is possible to separate an integrated high-Young's-modulus layer (a semiconductor substrate 1S and a contact interlayer insulating film CIL) and an interlayer insulating film (a low-Young's-modulus film; a low-dielectric-constant film) IL2 forming a second fine layer not to let them directly contact with each other, and stress can be diverged. As a result, film exfoliation of the interlayer insulating film IL2 formed of a low-Young's-modulus film can be prevented and thus reliability of semiconductor devices can be improved.