公开(公告)号：US20230215784A1

公开(公告)日：2023-07-06

申请号：US18182780

申请日：2023-03-13

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Masahiro MATSUMOTO ,  Masahiko FUJISAWA ,  Akihiko OSAKI ,  Atsushi ISHII

IPC: H01L23/532 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L23/53295 ,  H01L23/5226 ,  H01L21/768

Abstract: A preferred aim of the invention is to provide technique for improving reliability of semiconductor devices when using a low-dielectric-constant film having a lower dielectric constant than a silicon oxide film to a part of an interlayer insulating film. More specifically, to achieve the preferred aim, an interlayer insulating film IL1 forming a first fine layer is formed of a middle-Young's-modulus film, and thus it is possible to separate an integrated high-Young's-modulus layer (a semiconductor substrate 1S and a contact interlayer insulating film CIL) and an interlayer insulating film (a low-Young's-modulus film; a low-dielectric-constant film) IL2 forming a second fine layer not to let them directly contact with each other, and stress can be diverged. As a result, film exfoliation of the interlayer insulating film IL2 formed of a low-Young's-modulus film can be prevented and thus reliability of semiconductor devices can be improved.

公开(公告)号：US20200211931A1

公开(公告)日：2020-07-02

申请号：US16811846

申请日：2020-03-06

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Masahiro MATSUMOTO ,  Masahiko FUJISAWA ,  Akihiko OSAKI ,  Atsushi ISHII

IPC: H01L23/495 ,  H01L21/768 ,  H01L23/00 ,  H01L23/532 ,  H01L23/31

Abstract: A preferred aim of the invention is to provide technique for improving reliability of semiconductor devices when using a low-dielectric-constant film having a lower dielectric constant than a silicon oxide film to apart of an interlayer insulating film. More specifically, to achieve the preferred aim, an interlayer insulating film IL1 forming a first fine layer is formed of a middle-Young's-modulus film, and thus it is possible to separate an integrated high-Young's-modulus layer (a semiconductor substrate 1S and a contact interlayer insulating film CIL) and an interlayer insulating film (a low-Young's-modulus film; a low-dielectric-constant film) IL2 forming a second fine layer not to let them directly contact with each other, and stress can be diverged. As a result, film exfoliation of the interlayer insulating film IL2 formed of a low-Young's-modulus film can be prevented and thus reliability of semiconductor devices can be improved.

公开(公告)号：US20180182850A1

公开(公告)日：2018-06-28

申请号：US15836889

申请日：2017-12-10

Applicant: Renesas Electronics Corporation

Inventor： Masaru KADOSHIMA ,  Masahiko FUJISAWA

IPC: H01L29/08 ,  H01L23/522 ,  H01L21/762 ,  H01L21/84 ,  H01L21/02 ,  H01L27/12 ,  H01L21/768

CPC classification number: H01L29/0847 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02647 ,  H01L21/0265 ,  H01L21/76283 ,  H01L21/76802 ,  H01L21/76897 ,  H01L21/84 ,  H01L23/5226 ,  H01L27/1203 ,  H01L29/41733 ,  H01L29/66772 ,  H01L29/78618 ,  H01L29/78624 ,  H01L29/78654

Abstract: In a semiconductor device, a width of a second epitaxial layer is greater than a width of a first epitaxial layer, and a thickness of an end portion of the second epitaxial layer, which is in contact with an element isolation portion, is smaller than a thickness of an end portion of the first epitaxial layer, which is in contact with the element isolation portion, and a second shortest distance between the element isolation portion and a second plug is greater than a first shortest distance between the element isolation portion and a first plug.