公开(公告)号：US20200027996A1

公开(公告)日：2020-01-23

申请号：US16452261

申请日：2019-06-25

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Masao INOUE ,  Masaru KADOSHIMA ,  Yoshiyuki KAWASHIMA ,  Ichiro YAMAKAWA

IPC: H01L29/792 ,  H01L29/423 ,  H01L29/51 ,  H01L21/28 ,  H01L21/02 ,  H01L29/66

Abstract: A memory cell, which is a nonvolatile memory cell, includes a gate dielectric film having charge storage layer capable of holding charges, and a memory gate electrode formed on the gate dielectric film. The charge storage layer includes an insulating film containing hafnium, silicon, and oxygen, an insertion layer formed on the insulating film and containing aluminum, and an insulating film formed on the insertion layer and containing hafnium, silicon, and oxygen.