公开(公告)号：US20210066445A1

公开(公告)日：2021-03-04

申请号：US16889725

申请日：2020-06-01

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kazuhiko IWAKIRI ,  Akira MATSUMOTO

IPC: H01L49/02 ,  H01L21/67 ,  H01L21/768

Abstract: A semiconductor device including a multilayer wiring layer comprising a first wiring, a first insulating film formed on the multilayer wiring layer and having a first opening exposing a portion of the first wiring, a second insulating film formed on the first insulating film and having a second opening continuing with the first opening, and an inductor formed of the first wiring, and a second wiring electrically connected with the first wiring through a via formed in the first opening. A side surface of the via contacts with the first insulating film, and does not contact with the second insulating film.

公开(公告)号：US20250081490A1

公开(公告)日：2025-03-06

申请号：US18817322

申请日：2024-08-28

Applicant: Renesas Electronics Corporation

Inventor： Kazuhiko IWAKIRI

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/49 ,  H01L29/66

Abstract: The technology of improving the adhesion of the barrier metal film is provided. The semiconductor device includes: a floating region formed between a trench gate electrode and a trench emitter electrode; a stacked film formed on the floating region; an interlayer insulating film formed on the stacked film; a plug penetrating the interlayer insulating film and reaching the stacked film; a barrier metal film formed to cover the interlayer insulating film and the plug; and a metal film formed on the barrier metal film.