公开(公告)号：US20240162080A1

公开(公告)日：2024-05-16

申请号：US18482445

申请日：2023-10-06

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kiyoshi ENDO ,  Takashi MORIYAMA

IPC: H01L21/762 ,  H01L21/28 ,  H01L21/768 ,  H01L29/66

CPC classification number: H01L21/76224 ,  H01L21/28141 ,  H01L21/76834 ,  H01L29/66545

Abstract: A semiconductor device includes a first element disposed in a first region and including a high-dielectric-constant insulating film, a second element disposed in a second region, and an element isolation portion disposed between the first region and the second region and electrically isolating between the first element and the second element. A step portion is formed on the surface of the element isolation portion. The semiconductor device further includes a dummy pattern that straddles the step portion. The dummy pattern includes a first high-dielectric-constant insulating film and a conductive film covering the upper surface of the first high-dielectric-constant insulating film. The first high-dielectric-constant insulating film is exposed from both side surfaces of the dummy pattern. The semiconductor device further includes a sidewall insulating film covering the first high-dielectric-constant insulating film exposed from both side surfaces of the dummy pattern.