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公开(公告)号：US20190341339A1
公开(公告)日：2019-11-07
申请号：US16380651
申请日：2019-04-10
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Naoki FUJITA , Hiroyuki NAKAMURA
IPC: H01L23/495 , H02M1/34 , H03K17/0814 , H02M3/335 , H01L29/78 , H01L23/00
Abstract: Reliability of a semiconductor device is improved. In the semiconductor device SA1, a snubber capacitor pad SNP electrically connected to the capacitor electrode of the snubber capacitor is formed on the surface of the semiconductor chip CHP.
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