公开(公告)号：US11195782B2

公开(公告)日：2021-12-07

申请号：US16380651

申请日：2019-04-10

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Naoki Fujita ,  Hiroyuki Nakamura

IPC: H01L23/495 ,  H03K17/0814 ,  H02M3/335 ,  H01L29/78 ,  H01L23/00 ,  H02M1/34

Abstract: Reliability of a semiconductor device is improved. In the semiconductor device SA1, a snubber capacitor pad SNP electrically connected to the capacitor electrode of the snubber capacitor is formed on the surface of the semiconductor chip CHP.

公开(公告)号：US09558989B2

公开(公告)日：2017-01-31

申请号：US14796984

申请日：2015-07-10

Applicant: Renesas Electronics Corporation

Inventor： Tomohiko Aika ,  Hajime Suzuki ,  Naoki Fujita

IPC: H01L21/76 ,  H01L21/762 ,  H01L27/12 ,  H01L21/8234

CPC classification number: H01L21/76224 ,  H01L21/31053 ,  H01L21/823481 ,  H01L27/1203

Abstract: After embedding a silicon oxide film within a second trench that opens in a semiconductor substrate using a silicon nitride film as a hard mask, the silicon oxide film over the silicon nitride film is polished, and then, wet etching is performed before a step for removing the silicon nitride film, and thereby the upper surface of the silicon oxide film within a first trench opened in the silicon nitride film is retreated.

Abstract translation: 在使用氮化硅膜作为硬掩模在半导体衬底中打开的第二沟槽中埋入氧化硅膜之后，对氮化硅膜上的氧化硅膜进行抛光，然后在除去步骤之前进行湿式蚀刻 在氮化硅膜中开放的第一沟槽内的氧化硅膜的上表面被退回，

公开(公告)号：US20160013092A1

公开(公告)日：2016-01-14

申请号：US14796984

申请日：2015-07-10

Applicant: Renesas Electronics Corporation

Inventor： Tomohiko Aika ,  Hajime Suzuki ,  Naoki Fujita

IPC: H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/31053 ,  H01L21/823481 ,  H01L27/1203

Abstract: After embedding a silicon oxide film within a second trench that opens in a semiconductor substrate using a silicon nitride film as a hard mask, the silicon oxide film over the silicon nitride film is polished, and then, wet etching is performed before a step for removing the silicon nitride film, and thereby the upper surface of the silicon oxide film within a first trench opened in the silicon nitride film is retreated.

Abstract translation: 在使用氮化硅膜作为硬掩模在半导体衬底中打开的第二沟槽中埋入氧化硅膜之后，对氮化硅膜上的氧化硅膜进行抛光，然后在除去步骤之前进行湿式蚀刻 在氮化硅膜中开放的第一沟槽内的氧化硅膜的上表面被退回，