公开(公告)号：US20240267068A1

公开(公告)日：2024-08-08

申请号：US18397714

申请日：2023-12-27

Applicant: Renesas Electronics Corporation

Inventor： Wataru SAITO ,  Fukashi MORISHITA

IPC: H04B1/10 ,  H04B1/40

CPC classification number: H04B1/1027 ,  H04B1/40

Abstract: The circuit area of the semiconductor device in which the transmission period and the reception period are alternately repeated is reduced. The semiconductor device includes a transmission circuit and a receiving circuit. The receiving circuit includes a gain control circuit that samples the input signal to adjust the gain of the receiving circuit during the reception period and adjusts the gain based on the sampling result during the transmission period.

公开(公告)号：US20240171835A1

公开(公告)日：2024-05-23

申请号：US18498278

申请日：2023-10-31

Applicant: Renesas Electronics Corporation

Inventor： Wataru SAITO ,  Fukashi MORISHITA

IPC: H04N23/52 ,  H04N23/68

CPC classification number: H04N23/52 ,  H04N23/6812 ,  H04N23/687

Abstract: A programmable gain amplifier provided in a semiconductor device includes a fully differential amplifier configured to amplify differential input voltages having an offset voltage. First and second correction voltages are input to a non-inverting input node and an inverting input node of the fully differential amplifier via first and second resistance elements, respectively.

公开(公告)号：US20170212154A1

公开(公告)日：2017-07-27

申请号：US15401596

申请日：2017-01-09

Applicant: Renesas Electronics Corporation

Inventor： Masanori OTSUKA ,  Wataru SAITO ,  Yoshitaka JINGU ,  Yasuhiko KOKAMI ,  Satoshi KONDO ,  Junya HORISHIMA

IPC: G01R19/32 ,  H03K17/687

CPC classification number: G01R19/32 ,  F16D48/06 ,  F16D2121/18 ,  G01R31/007 ,  H03K17/6872

Abstract: According to one embodiment, a current detection circuit (12) includes: a detection resistor (Rs) provided between a solenoid valve (106) and a solenoid driver (11); an amplification unit (121) configured to amplify a detected voltage of the detection resistor (Rs); an AD converter (122) that is driven by a reference voltage (Vref) generated based on a reference current (Iref) and configured to convert an output voltage from the amplification unit (121) into a digital value and output the digital value as a detected current value (D1); and a correction unit configured to perform a correction on the detected current value (D1). The correction unit includes: a temperature sensor (123); a storage unit (125) configured to store information about temperature characteristics of the detected current value (D1) generated due to temperature characteristics of a reference current in each of two or more different temperature regions; and an operation unit configured to apply, to the detected current value (D1), a first correction coefficient calculated based on a detection result of the temperature sensor (123) and information about temperature characteristics of the detected current value (D1) stored in the storage unit (125).

公开(公告)号：US20230138391A1

公开(公告)日：2023-05-04

申请号：US17978266

申请日：2022-11-01

Applicant: Renesas Electronics Corporation

Inventor： Wataru SAITO ,  Fukashi MORISHITA

IPC: H03M1/10

Abstract: A semiconductor device includes a digital-analog converter provided with a plurality of current cells, and a test circuit electrically connected to the digital-analog converter to test the digital-analog converter. The test circuit includes: a charge information holding circuit that holds, as differential charge information, a difference value between a first charge according to a first current and a second charge according to a second current by at least one or more current cells among the plurality of current cells; a reference voltage generation circuit that generates a reference voltage to be comparative object; and a comparison circuit that compares a determination voltage according to the differential charge information and the reference voltage to output a comparison result.

公开(公告)号：US20200309824A1

公开(公告)日：2020-10-01

申请号：US16820178

申请日：2020-03-16

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Keisuke KIMURA ,  Hideyuki TAJIMA ,  Wataru SAITO

IPC: G01R19/165 ,  G05F3/26

Abstract: The present invention provides a current detection circuit, semiconductor device, and a semiconductor system suitable for improving a current sensing accuracy. According to one embodiment, the current detection circuit 12 comprises a sense transistor Tr11 through which a first sense current proportional to the current flowing through the drive transistor MN1 flows, an operational amplifier AMP1 for amplifying the potential difference of the voltage of the external output terminal OUT and the source voltage of the sense transistor Tr11 for outputting the first sense current, a transistor Tr12 provided in series with the sense transistor Tr11 and to which the output voltage of the operational amplifier AMP1 is applied to the gate, and a switch SW3 provided between the external output terminal OUT and the source of the sense transistor Tr11 and turned on when the drive transistor MN1 is turned off.