公开(公告)号：US20230097408A1

公开(公告)日：2023-03-30

申请号：US17489145

申请日：2021-09-29

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Nozomi ITO ,  Kazuyoshi MAEKAWA ,  Yuji TAKAHASHI ,  Yasuaki TSUCHIYA ,  Nobuhito SHIRAISHI

IPC: H01L49/02 ,  H01L23/522 ,  H01C7/00 ,  H01C17/12

Abstract: A semiconductor device includes an insulating layer, a first conductive film, a second conductive film and a thin-film resistor. The insulating layer has a penetrating portion. The first conductive film is formed in the penetrating portion such that a recess is formed at an upper part of the penetration portion. The second conductive film is formed on an upper surface of the first conductive film and an inner surface of the penetrating portion. The thin-film resistor includes silicon and metal. The thin-film resistor is formed on the second conductive film and the insulating layer.