公开(公告)号：US20230116260A1

公开(公告)日：2023-04-13

申请号：US17892639

申请日：2022-08-22

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Nozomi ITO ,  Yorinobu KUNIMUNE ,  Kenichiro ABE ,  Nobuhito SHIRAISHI

IPC: H01C7/06 ,  H01C17/232 ,  H01C17/26 ,  H01L49/02

Abstract: A resistor material including a plurality of crystalline phases having a positive temperature coefficient of resistance, and an amorphous phase having a negative temperature coefficient of resistance and having a resistivity higher than the crystalline phase, in a mixed state, is provided. Moreover, a resistor element having a resistor film configured by the resistor material described above, and a method of manufacturing a resistor element by forming a film of an amorphous material having a negative temperature coefficient of resistance and subjecting this film to an annealing treatment to obtain the resistor element described above, are provided.

公开(公告)号：US20240006354A1

公开(公告)日：2024-01-04

申请号：US18190460

申请日：2023-03-27

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Shota OKABE ,  Nozomi ITO ,  Yuji TAKAHASHI

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/48 ,  H01L24/43 ,  H01L2224/03464 ,  H01L2224/48664 ,  H01L2224/0345 ,  H01L2224/05124 ,  H01L2224/05644 ,  H01L2224/04042 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/43826 ,  H01L2224/05147

Abstract: A semiconductor device includes a first metal film forming an uppermost layer wiring that has a bonding pad. A concentration of impurities at a crystal grain boundary of the first metal film is higher than a concentration of impurities in crystal grains in the first metal film. The maximum grain size of crystal grains included in the first metal film is less than 5 μm.

公开(公告)号：US20250046705A1

公开(公告)日：2025-02-06

申请号：US18769072

申请日：2024-07-10

Applicant: Renesas Electronics Corporation

Inventor： Nobuhito SHIRAISHI ,  Yorinobu KUNIMUNE ,  Yoshimi KATO ,  Nozomi ITO ,  Mengnan YANG ,  Kenichiro SONODA

IPC: H01L23/522 ,  H01L21/02 ,  H01L21/768 ,  H01L23/532

Abstract: A semiconductor device includes a first dielectric film, a resistor element disposed on the first dielectric film, and a second dielectric film disposed on the resistor element. The resistor element contains silicon, chromium, and carbon. The silicon concentration in the resistor element increases from a center part of the resistor element towards an upper surface of the resistor element, and also increases from the center part of the resistor element towards a lower surface of the resistor element.

公开(公告)号：US20230097408A1

公开(公告)日：2023-03-30

申请号：US17489145

申请日：2021-09-29

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Nozomi ITO ,  Kazuyoshi MAEKAWA ,  Yuji TAKAHASHI ,  Yasuaki TSUCHIYA ,  Nobuhito SHIRAISHI

IPC: H01L49/02 ,  H01L23/522 ,  H01C7/00 ,  H01C17/12

Abstract: A semiconductor device includes an insulating layer, a first conductive film, a second conductive film and a thin-film resistor. The insulating layer has a penetrating portion. The first conductive film is formed in the penetrating portion such that a recess is formed at an upper part of the penetration portion. The second conductive film is formed on an upper surface of the first conductive film and an inner surface of the penetrating portion. The thin-film resistor includes silicon and metal. The thin-film resistor is formed on the second conductive film and the insulating layer.