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    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    1.
    发明公开
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20230402494A1

    公开(公告)日：2023-12-14

    申请号：US18194802

    申请日：2023-04-03

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Nobuhito SHIRAISHI

    IPC: H01L29/00 ,  H01C7/00 ,  H01L21/768 ,  H01L23/522 ,  H01C17/12

    CPC classification number: H01L28/24 ,  H01C7/006 ,  H01L21/76877 ,  H01L23/5228 ,  H01C17/12 ,  H01L21/76843

    Abstract: A semiconductor device includes a wiring layer, a dielectric layer covering the wiring layer, a thin film resistor provided on the dielectric layer, and a plug electrode connecting the thin film resistor to the wiring layer. The plug electrode includes a barrier layer and a buried layer. The buried layer is configured by the filling portion filling a region surrounded by a first incline surface, and an extension portion extending from the filling portion along a second incline surface. The thin film resistor is in contact with the filling portion and the extension portion of the plug electrode. A second incline angle between the second incline surface and a main surface of a semiconductor substrate is smaller than a first incline angle between the first incline surface and the main surface of the semiconductor substrate.

    SEMICONDUCTOR DEVICE
    2.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230343701A1

    公开(公告)日：2023-10-26

    申请号：US18174932

    申请日：2023-02-27

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Nobuhito SHIRAISHI ,  Naohito SUZUMURA

    IPC: H01L23/522 ,  H01C7/00 ,  H01L23/532 ,  H01L21/768 ,  H01C17/12

    CPC classification number: H01L23/5228 ,  H01C7/006 ,  H01L23/5226 ,  H01L23/53238 ,  H01L21/76832 ,  H01L28/24 ,  H01C17/12

    Abstract: A semiconductor device includes first and second interlayer insulating films, first and second wirings, and a resistor film. The first wiring is disposed on the first interlayer insulating film. The second interlayer insulating film includes a first layer and a second layer. The first layer is disposed on the first interlayer insulating film so as to cover the first wiring. The resistor film is disposed on the first layer. The resistor film contains at least one selected from the group consisting of silicon chromium, silicon chromium into which carbon is introduced, nickel chromium, titanium nitride and tantalum nitride. The second layer is disposed on the first layer so as to cover the resistor film. The second wiring is disposed on the second layer. The resistor film is closer to the first wiring than to the second wiring in a thickness direction of the second interlayer insulating film.

    SEMICONDUCTOR DEVICE
    3.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230343700A1

    公开(公告)日：2023-10-26

    申请号：US18163566

    申请日：2023-02-02

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Nobuhito SHIRAISHI ,  Yasuo MORIMOTO ,  Yoshihiro FUNATO

    IPC: H01L23/522 ,  H01L23/532 ,  H01L25/065

    CPC classification number: H01L23/5228 ,  H01L23/5329 ,  H01L25/0655 ,  H01L2924/14253 ,  H01L2924/142

    Abstract: A semiconductor device includes a plurality of resistive films arranged on an interlayer dielectric film. Each of the plurality of resistive films extends in a first direction in plan view. The plurality of resistive films are arranged spaced apart in a second direction orthogonal to the first direction in plan view. The plurality of resistive films are divided into a first group, a second group, and a third group. The first group is located between the second group and the third group in the second direction. A second width variation amount of each of the plurality of second resistive films belonging to the second group and a third width variation amount of each of the plurality of third resistive films belonging to the third group are larger than a first width variation amount of each of the plurality of first resistive films belonging to the first group.

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20230112824A1

    公开(公告)日：2023-04-13

    申请号：US17900252

    申请日：2022-08-31

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Nobuhito SHIRAISHI

    IPC: H01L23/522 ,  H01L49/02 ,  H01L21/768

    Abstract: A semiconductor device includes resistor layers, and a wiring layer which is disposed at least either above or below the resistor layers. The resistor layers include first resistor layers and second resistor layers each having a width in a first direction smaller than a width of the first resistor layer in a first direction. The wiring layer includes first overlapping regions in which the wiring layer overlaps with the first resistor layers in plan view and second overlapping regions in which the wiring layer overlaps with the second resistor layers in plan view. A value obtained by dividing a total value of areas of the second overlapping regions by a width of the second resistor layer is smaller than a value obtained by dividing a total value of areas of the first overlapping regions by a width of the first resistor layer.

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