公开(公告)号：US09502510B2

公开(公告)日：2016-11-22

申请号：US14744275

申请日：2015-06-19

Applicant: RF Micro Devices, Inc.

Inventor： Peter J. Zampardi ,  Brian G. Moser ,  Jing Zhang ,  Thomas James Rogers ,  Dheeraj Mohata

IPC: H01L29/66 ,  H01L29/205 ,  H01L29/737 ,  H01L29/08

CPC classification number: H01L29/205 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/66242 ,  H01L29/7371

Abstract: The present disclosure relates to heterojunction bipolar transistors for improved radio frequency (RF) performance. In this regard, a heterojunction bipolar transistor includes a base, an emitter, and a collector. The base is formed over the collector such that a base-collector junction is formed between the base and the collector. The base-collector junction is configured to become forward-biased at a first turn-on voltage. The emitter is formed over the base such that a base-emitter junction is formed between the base and the emitter. The base-emitter junction is configured to become forward-biased at a second turn-on voltage, as opposed to the first turn-on voltage. Notably, the second turn-on voltage is lower than the first turn-on voltage.

Abstract translation: 本公开涉及用于改善射频（RF）性能的异质结双极晶体管。 在这方面，异质结双极晶体管包括基极，发射极和集电极。 基极形成在集电体上方，使得在基极和集电极之间形成基极 - 集电极结。 基极 - 集电极结被配置为在第一导通电压下正向偏置。 发射极形成在基极上，使得在基极和发射极之间形成基极 - 发射极结。 与第一导通电压相反，基极 - 发射极结被配置为以第二导通电压正向偏置。 值得注意的是，第二导通电压低于第一导通电压。

公开(公告)号：US20150372098A1

公开(公告)日：2015-12-24

申请号：US14744275

申请日：2015-06-19

Applicant: RF Micro Devices, Inc.

Inventor： Peter J. Zampardi ,  Brian G. Moser ,  Jing Zhang ,  Thomas James Rogers ,  Dheeraj Mohata

IPC: H01L29/205 ,  H01L29/10 ,  H01L29/08 ,  H01L29/737 ,  H01L29/66

CPC classification number: H01L29/205 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/66242 ,  H01L29/7371

Abstract: The present disclosure relates to heterojunction bipolar transistors for improved radio frequency (RF) performance. In this regard, a heterojunction bipolar transistor includes a base, an emitter, and a collector. The base is formed over the collector such that a base-collector junction is formed between the base and the collector. The base-collector junction is configured to become forward-biased at a first turn-on voltage. The emitter is formed over the base such that a base-emitter junction is formed between the base and the emitter. The base-emitter junction is configured to become forward-biased at a second turn-on voltage, as opposed to the first turn-on voltage. Notably, the second turn-on voltage is lower than the first turn-on voltage.

Abstract translation: 本公开涉及用于改善射频（RF）性能的异质结双极晶体管。 在这方面，异质结双极晶体管包括基极，发射极和集电极。 基极形成在集电体上方，使得在基极和集电极之间形成基极 - 集电极结。 基极 - 集电极结被配置为在第一导通电压下正向偏置。 发射极形成在基极上，使得在基极和发射极之间形成基极 - 发射极结。 与第一导通电压相反，基极 - 发射极结被配置为以第二导通电压正向偏置。 值得注意的是，第二导通电压低于第一导通电压。