公开(公告)号：US09502510B2

公开(公告)日：2016-11-22

申请号：US14744275

申请日：2015-06-19

Applicant: RF Micro Devices, Inc.

Inventor： Peter J. Zampardi ,  Brian G. Moser ,  Jing Zhang ,  Thomas James Rogers ,  Dheeraj Mohata

IPC: H01L29/66 ,  H01L29/205 ,  H01L29/737 ,  H01L29/08

CPC classification number: H01L29/205 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/66242 ,  H01L29/7371

Abstract: The present disclosure relates to heterojunction bipolar transistors for improved radio frequency (RF) performance. In this regard, a heterojunction bipolar transistor includes a base, an emitter, and a collector. The base is formed over the collector such that a base-collector junction is formed between the base and the collector. The base-collector junction is configured to become forward-biased at a first turn-on voltage. The emitter is formed over the base such that a base-emitter junction is formed between the base and the emitter. The base-emitter junction is configured to become forward-biased at a second turn-on voltage, as opposed to the first turn-on voltage. Notably, the second turn-on voltage is lower than the first turn-on voltage.

Abstract translation: 本公开涉及用于改善射频（RF）性能的异质结双极晶体管。 在这方面，异质结双极晶体管包括基极，发射极和集电极。 基极形成在集电体上方，使得在基极和集电极之间形成基极 - 集电极结。 基极 - 集电极结被配置为在第一导通电压下正向偏置。 发射极形成在基极上，使得在基极和发射极之间形成基极 - 发射极结。 与第一导通电压相反，基极 - 发射极结被配置为以第二导通电压正向偏置。 值得注意的是，第二导通电压低于第一导通电压。

公开(公告)号：US20150372098A1

公开(公告)日：2015-12-24

申请号：US14744275

申请日：2015-06-19

Applicant: RF Micro Devices, Inc.

Inventor： Peter J. Zampardi ,  Brian G. Moser ,  Jing Zhang ,  Thomas James Rogers ,  Dheeraj Mohata

IPC: H01L29/205 ,  H01L29/10 ,  H01L29/08 ,  H01L29/737 ,  H01L29/66

CPC classification number: H01L29/205 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/66242 ,  H01L29/7371

Abstract: The present disclosure relates to heterojunction bipolar transistors for improved radio frequency (RF) performance. In this regard, a heterojunction bipolar transistor includes a base, an emitter, and a collector. The base is formed over the collector such that a base-collector junction is formed between the base and the collector. The base-collector junction is configured to become forward-biased at a first turn-on voltage. The emitter is formed over the base such that a base-emitter junction is formed between the base and the emitter. The base-emitter junction is configured to become forward-biased at a second turn-on voltage, as opposed to the first turn-on voltage. Notably, the second turn-on voltage is lower than the first turn-on voltage.

Abstract translation: 本公开涉及用于改善射频（RF）性能的异质结双极晶体管。 在这方面，异质结双极晶体管包括基极，发射极和集电极。 基极形成在集电体上方，使得在基极和集电极之间形成基极 - 集电极结。 基极 - 集电极结被配置为在第一导通电压下正向偏置。 发射极形成在基极上，使得在基极和发射极之间形成基极 - 发射极结。 与第一导通电压相反，基极 - 发射极结被配置为以第二导通电压正向偏置。 值得注意的是，第二导通电压低于第一导通电压。

公开(公告)号：US20160293700A1

公开(公告)日：2016-10-06

申请号：US15083566

申请日：2016-03-29

Applicant: RF Micro Devices, Inc.

Inventor： Peter J. Zampardi ,  Brian G. Moser ,  Jing Zhang ,  Thomas James Rogers

IPC: H01L29/08 ,  H01L29/737

CPC classification number: H01L29/7371 ,  H01L29/0821 ,  H01L29/205

Abstract: A transistor includes a sub-collector, a base, a collector between the sub-collector and the base, and an emitter on the base opposite the collector. The collector includes a first region adjacent to the base and a second region between the first region and the sub-collector. The first region has a graduated doping profile such that a doping concentration of the first region decreases in proportion to a distance from the base. The second region has a substantially constant doping profile. By providing the collector with a doping profile as described, the linearity of the transistor is significantly improved while maintaining the radio frequency (RF) gain thereof.

Abstract translation: 晶体管包括副集电极，基极，子集电极和基极之间的集电极，以及与集电极相对的基极上的发射极。 收集器包括与基底相邻的第一区域和位于第一区域和副收集器之间的第二区域。 第一区域具有渐变掺杂分布，使得第一区域的掺杂浓度与距离基极的距离成比例地减小。 第二区域具有基本恒定的掺杂分布。 通过向集电极提供如上所述的掺杂分布，在保持其射频（RF）增益的同时，晶体管的线性明显改善。