公开(公告)号：US09093463B1

公开(公告)日：2015-07-28

申请号：US14537424

申请日：2014-11-10

Applicant: Richtek Technology Corporation

Inventor： Chung-Yu Hung ,  Jian-Hsing Lee ,  Tzu-Cheng Kao ,  Tsung-Yi Huang

IPC: H01L21/336 ,  H01L29/66 ,  H01L29/737

CPC classification number: H01L29/66393 ,  H01L27/0262 ,  H01L29/0649 ,  H01L29/737 ,  H01L29/87

Abstract: A silicon controlled rectifier includes: a substrate; a N well and a P well positioned on a side of the substrate and contact with each other; a first N region and a first P region positioned on an upper surface of the N well and contact with each other; a second N region and a second P region positioned on an upper surface of the P well and contact with each other; a first oxide isolation region isolating the first P region and the second N region; a second oxide isolation region isolating the second N region and the second P region; an anode terminal coupled with the first N region and the first P region; and a cathode terminal coupled with the second N region and the second P region. The first P region has a doping concentration less than 80% of that of the second P region.

Abstract translation: 可控硅整流器包括：基板; N阱和P阱定位在基板的一侧并彼此接触; 第一N区和第一P区，位于N阱的上表面并彼此接触; 第二N区和第二P区，位于P阱的上表面并彼此接触; 隔离所述第一P区和所述第二N区的第一氧化物隔离区; 隔离所述第二N区域和所述第二P区域的第二氧化物隔离区域; 与所述第一N区和所述第一P区耦合的阳极端; 以及与第二N区域和第二P区域耦合的阴极端子。 第一P区的掺杂浓度小于第二P区的掺杂浓度的80％。

公开(公告)号：US20220165880A1

公开(公告)日：2022-05-26

申请号：US17666501

申请日：2022-02-07

Applicant: RICHTEK TECHNOLOGY CORPORATION

Inventor： Tsung-Yi Huang ,  Kun-Huang Yu ,  Ying-Shiou Lin ,  Chu-Feng Chen ,  Chung-Yu Hung ,  Yi-Rong Tu

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/08

Abstract: A high voltage device includes: a semiconductor layer, a well, a body region, a gate, a source, a drain, and a drift oxide region. The semiconductor layer is formed on a substrate, wherein the semiconductor layer has at least one trench. The well is formed in the semicoducotor layer. The body region is formed in the well. The gate is formed on the well, and is in contact with the well. The source and the drain are located below, outside, and at different sides of the gate, in the body region and the well respectively. The drift oxide region is formed on a drift region, wherein a bottom surface of the drift oxide region is higher than a bottom surface of the trench.