公开(公告)号：US09853100B1

公开(公告)日：2017-12-26

申请号：US15490662

申请日：2017-04-18

Applicant: RICHTEK TECHNOLOGY CORPORATION

Inventor： Tsung-Ying Tsai ,  Kun-Hun You ,  Tsung-Yi Huang

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L29/08 ,  H01L29/40 ,  H01L29/423

CPC classification number: H01L29/063 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/402 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/7816

Abstract: The present invention provides a high voltage device and manufacturing method thereof. The high voltage device includes: a semiconductor substrate, an isolation structure, a gate, a body region, a well, a source, a drain and a lightly doped diffusion (LDD) region. The isolation structure is formed on an upper surface of the semiconductor substrate, for defining a device region, The LDD region is formed on the well in the device region. In a lateral direction, the LDD region is located between the gate and the drain, and the LDD region is not in direct contact with the drain.