公开(公告)号：US20210191259A1

公开(公告)日：2021-06-24

申请号：US17119708

申请日：2020-12-11

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD.

Inventor： Hyung Tak Jeon ,  Kyu Cheol Lee ,  Seung-Keun Kim ,  Seung-Kyu Song

IPC: G03F7/00 ,  C08F220/14 ,  C08F212/08 ,  G03F7/033 ,  G03F7/004

Abstract: The colored photosensitive resin composition of the present invention comprises a multifunctional thiol compound and/or a compound containing a double bond and a hydroxyl group, whereby it can sufficiently form a cured film even at low temperatures. In addition, the photosensitive resin composition of the present invention has a fast development speed and excellent resolution and chemical resistance.

公开(公告)号：US11493847B2

公开(公告)日：2022-11-08

申请号：US16879173

申请日：2020-05-20

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD.

Inventor： Seung-Keun Kim ,  Hyung-Tak Jeon ,  Kyu Cheol Lee ,  Kyung-Jae Park ,  Seung-Kyu Song

IPC: G03F7/09 ,  G03F7/38 ,  C08K5/34 ,  C08K5/33 ,  C08K5/11 ,  C08F220/32 ,  C08F220/24 ,  C08F220/18 ,  C08F220/06 ,  C08F222/40 ,  C08F212/08 ,  C08K5/00 ,  C08K3/04 ,  G02F1/13 ,  G03F7/40 ,  B82Y20/00 ,  C08K5/3492 ,  G03F7/028 ,  G02F1/13357 ,  G02F1/1335

Abstract: The present invention relates to a structure for a quantum dot barrier rib and a process for preparing the same. The structure for a quantum dot barrier rib of the present invention comprises a cured film having a uniform film thickness and an appropriate range of film thickness. Here, the reflectance RSCI measured by the SCI (specular component included) method and the reflectance RSCE measured by the SCE (specular component excluded) method are reduced, and the ratio between them (RSCE/RSCI) is appropriately adjusted, so that it is possible to satisfy such characteristics as high light-shielding property and low reflectance at the same time while the resolution and pattern characteristics are maintained to be excellent. In addition, when the structure for a quantum dot barrier rib is prepared, it is possible to form a multilayer pattern having a uniform film thickness suitable for the quantum dot barrier ribs in a single development process. Thus, it can be advantageously used for a quantum dot display.