公开(公告)号：US20240332226A1

公开(公告)日：2024-10-03

申请号：US18739921

申请日：2024-06-11

申请人： ROHM CO., LTD.

发明人： Yosuke NISHIDA ,  Kazuisao TSURUDA

IPC分类号： H01L23/66 ,  H01P3/127 ,  H01Q5/22

CPC分类号： H01L23/66 ,  H01P3/127 ,  H01Q5/22 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6677

摘要： A semiconductor device includes a semiconductor element, a base and a first waveguide. The semiconductor element oscillates and radiates electromagnetic waves. The base includes a retaining cavity that retains the semiconductor element. The first waveguide includes a first waveguide passage connected to the retaining cavity. The first waveguide passage is configured to transmit the electromagnetic waves in a fundamental mode. The retaining cavity is a resonant cavity in which the electromagnetic waves resonate in a high-order mode.

公开(公告)号：US20230387563A1

公开(公告)日：2023-11-30

申请号：US17766927

申请日：2020-10-09

申请人： ROHM CO., LTD.

发明人： Jaeyoung KIM ,  Kazuisao TSURUDA ,  Yosuke NISHIDA

IPC分类号： H01P3/12 ,  H01Q13/02

CPC分类号： H01P3/12 ,  H01Q13/02

摘要： A terahertz device (A1) comprises a terahertz element (50) that allows oscillation and radiation of electromagnetic waves in the terahertz band and a waveguide (10) having a transmission region (101) for transmitting electromagnetic waves. The terahertz element (50) has an element principal surface (501) and an element rear surface (502) which face oppositely, an oscillation point (P1) for the oscillation of electromagnetic waves on the element principal surface (501), and a radiation point (P2) for the radiation of electromagnetic waves. The terahertz element (50) is disposed such that the oscillation point (P1) and the radiation point (P2) are placed in the transmission region (101).

公开(公告)号：US20230260913A1

公开(公告)日：2023-08-17

申请号：US18003819

申请日：2021-07-08

申请人： ROHM CO., LTD. ,  OSAKA UNIVERSITY

发明人： Masayuki FUJITA ,  Daniel Jonathan HEADLAND ,  Tadao NAGATSUMA ,  Yosuke NISHIDA

IPC分类号： H01L23/538 ,  H01L21/768 ,  H01L29/66 ,  H01P3/16 ,  H04B10/572

CPC分类号： H01L23/538 ,  H01L21/76802 ,  H01L29/66219 ,  H01P3/16 ,  H04B10/572

摘要： A terahertz module includes: a terahertz chip which includes an active device which emits a terahertz wave; and a dielectric substrate coupled to the terahertz chip. The terahertz chip includes a semiconductor substrate. The active device is disposed on an upper surface of the semiconductor substrate. A cutout is formed in a portion of a first side surface, among a plurality of side surfaces of the dielectric substrate, the cutout extending from an upper side of the first side surface to a lower side of the first side surface. The terahertz chip is fit into the cutout in such a direction that the upper surface of the semiconductor substrate is parallel to the first side surface and the semiconductor substrate is arranged in a bottom side of the cutout.