TERAHERTZ DEVICE AND PRODUCTION METHOD FOR TERAHERTZ DEVICE

    公开(公告)号:US20210167254A1

    公开(公告)日:2021-06-03

    申请号:US17266008

    申请日:2019-07-26

    Applicant: ROHM CO., LTD.

    Abstract: A terahertz device includes a terahertz element, a sealing resin, a wiring layer and a frame-shaped member. The terahertz element that performs conversion between terahertz waves and electric energy. The terahertz element has an element front surface and an element back surface spaced apart from each other in a first direction. The sealing resin covers the terahertz element. The wiring layer is electrically connected to the terahertz element. A frame-shaped member is made of a conductive material and arranged around the terahertz element as viewed in the first direction. The frame-shaped member has a reflective surface capable of reflecting the terahertz waves.

    TERAHERTZ ELEMENT AND SEMICONDUCTOR DEVICE

    公开(公告)号:US20220109233A1

    公开(公告)日:2022-04-07

    申请号:US17644225

    申请日:2021-12-14

    Applicant: ROHM CO., LTD.

    Abstract: A terahertz element of an aspect of the present disclosure includes a semiconductor substrate, first and second conductive layers, and an active element. The first and second conductive layers are on the substrate and mutually insulated. The active element is on the substrate and electrically connected to the first and second conductive layers. The first conductive layer includes a first antenna part extending along a first direction, a first capacitor part offset from the active element in a second direction as viewed in a thickness direction of the substrate, and a first conductive part connected to the first capacitor part. The second direction is perpendicular to the thickness direction and first direction. The second conductive layer includes a second capacitor part, stacked over and insulated from the first capacitor part. The substrate includes a part exposed from the first and second capacitor parts. The first conductive part has a portion spaced apart from the first antenna part in the second direction with the exposed part therebetween as viewed in the thickness direction.

    TERAHERTZ ELEMENT AND SEMICONDUCTOR DEVICE
    3.
    发明公开

    公开(公告)号:US20230378640A1

    公开(公告)日:2023-11-23

    申请号:US18322326

    申请日:2023-05-23

    Applicant: ROHM CO., LTD.

    Abstract: A terahertz element of an aspect of the present disclosure includes a semiconductor substrate, first and second conductive layers, and an active element. The first and second conductive layers are on the substrate and mutually insulated. The active element is on the substrate and electrically connected to the first and second conductive layers. The first conductive layer includes a first antenna part extending along a first direction, a first capacitor part offset from the active element in a second direction as viewed in a thickness direction of the substrate, and a first conductive part connected to the first capacitor part. The second direction is perpendicular to the thickness direction and first direction. The second conductive layer includes a second capacitor part, stacked over and insulated from the first capacitor part. The substrate includes a part exposed from the first and second capacitor parts. The first conductive part has a portion spaced apart from the first antenna part in the second direction with the exposed part therebetween as viewed in the thickness direction.

    TERAHERTZ DEVICE
    4.
    发明公开
    TERAHERTZ DEVICE 审中-公开

    公开(公告)号:US20230387563A1

    公开(公告)日:2023-11-30

    申请号:US17766927

    申请日:2020-10-09

    Applicant: ROHM CO., LTD.

    CPC classification number: H01P3/12 H01Q13/02

    Abstract: A terahertz device (A1) comprises a terahertz element (50) that allows oscillation and radiation of electromagnetic waves in the terahertz band and a waveguide (10) having a transmission region (101) for transmitting electromagnetic waves. The terahertz element (50) has an element principal surface (501) and an element rear surface (502) which face oppositely, an oscillation point (P1) for the oscillation of electromagnetic waves on the element principal surface (501), and a radiation point (P2) for the radiation of electromagnetic waves. The terahertz element (50) is disposed such that the oscillation point (P1) and the radiation point (P2) are placed in the transmission region (101).

    TERAHERTZ ELEMENT AND SEMICONDUCTOR DEVICE
    5.
    发明申请

    公开(公告)号:US20200168985A1

    公开(公告)日:2020-05-28

    申请号:US16619440

    申请日:2018-06-26

    Applicant: ROHM CO., LTD.

    Abstract: A terahertz element of an aspect of the present disclosure includes a semiconductor substrate, first and second conductive layers, and an active element. The first and second conductive layers are on the substrate and mutually insulated. The active element is on the substrate and electrically connected to the first and second conductive layers. The first conductive layer includes a first antenna part extending along a first direction, a first capacitor part offset from the active element in a second direction as viewed in a thickness direction of the substrate, and a first conductive part connected to the first capacitor part. The second direction is perpendicular to the thickness direction and first direction. The second conductive layer includes a second capacitor part, stacked over and insulated from the first capacitor part. The substrate includes a part exposed from the first and second capacitor parts. The first conductive part has a portion spaced apart from the first antenna part in the second direction with the exposed part therebetween as viewed in the thickness direction.

    TERAHERTZ DEVICE AND TERAHERTZ INTEGRATED CIRCUIT

    公开(公告)号:US20170250458A1

    公开(公告)日:2017-08-31

    申请号:US15443636

    申请日:2017-02-27

    Abstract: A THz device includes: an antenna electrode capable of transmitting and receiving a THz wave to free space; first transmission lines capable of transmitting the THz wave, the first transmission lines respectively connected to the antenna electrodes; an active element of which a main electrode is connected to each of the first transmission lines; second transmission lines capable of transmitting the THz wave, the second transmission lines connected to the first active device; pad electrodes respectively connected to the second transmission lines; and a low-pass filter with respect to the THz wave, the low-pass filter connected to the pad electrodes, wherein impedance matching of between the antenna electrode and the active element is performed by an impedance conversion of the first transmission lines. The THz device is capable of the high-efficiency matching between the active element and the antenna due to the impedance conversion effect of the transmission line.

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