公开(公告)号：US20100288190A1

公开(公告)日：2010-11-18

申请号：US12748435

申请日：2010-03-28

申请人： RONG ZHANG ,  ZILI XIE ,  BIN LIU ,  XIANGQIAN XIU ,  HONG ZHAO ,  XUEMEI HUA ,  PING HAN ,  DEYI FU ,  YI SHI ,  YOUDOU ZHENG

发明人： RONG ZHANG ,  ZILI XIE ,  BIN LIU ,  XIANGQIAN XIU ,  HONG ZHAO ,  XUEMEI HUA ,  PING HAN ,  DEYI FU ,  YI SHI ,  YOUDOU ZHENG

IPC分类号： C30B25/10 ,  C30B25/02

CPC分类号： C23C16/303 ,  C23C16/0218 ,  C30B25/183 ,  C30B25/186 ,  C30B29/403

摘要： A kind of growth method of non-polarized-plane InN which is growing m-plane InN and In-rich m-plane InGaN on LiA1O2 (100) substrate by the metal organic chemical vapor deposition (MOCVD), and m-plane is one kind of non-polarized-plane, In-rich denotes that the component of In x is higher than 0.3 in InxGa1−xN. The invention synthetically grows m-plane InN and In-rich m-plane InGaN using LiA1O2 (100) as substrate which will be disposed and the buffer by MOCVD. And the non-polarized-plane InN would be produced through choosing appropriate substrate and the technique condition of growth as well as using the design of buffer by MOCVD.

摘要翻译： 通过金属有机化学气相沉积（MOCVD）在LiAlO2（100）衬底上生长m面InN和富In m面InGaN的非极化面InN的一种生长方法，m面是一种 非极化平面，富In表示In x Ga 1-x N中In x的分量高于0.3。 本发明使用LiAlO 2（100）作为衬底并通过MOCVD进行缓冲，合成生长m面InN和富In m面InGaN。 而非极化平面InN将通过选择合适的衬底和生长的技术条件以及通过MOCVD使用缓冲液的设计来生产。