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1.发明授权Structure and method of fabricating embedded vertical DRAM arrays with silicided bitline and polysilicon interconnect 失效用硅化硅线和多晶硅互连制造嵌入式垂直DRAM阵列的结构和方法公开(公告)号：US06429068B1
公开(公告)日：2002-08-06
申请号：US09897868
申请日：2001-07-02
IPC分类号： H01L218242
CPC分类号： H01L27/10891 , H01L27/10864 , H01L27/10876 , H01L27/10894
摘要： A structure and process for fabricating embedded vertical DRAM cells includes fabricating vertical MOSFET DRAM cells with silicided polysilicon layers in the array regions, the landing pad and/or interconnect structures, the support source and drain regions and/or the gate stack. The process eliminates the need for a M0 metallization layer.
摘要翻译： 用于制造嵌入式垂直DRAM单元的结构和工艺包括在阵列区域中制造具有硅化多晶硅层的垂直MOSFET DRAM单元，着陆焊盘和/或互连结构，支撑源极和漏极区域和/或栅极堆叠。 该工艺消除了对M0金属化层的需要。
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2.发明授权Embedded vertical DRAM arrays with silicided bitline and polysilicon interconnect 有权具有硅化位线和多晶硅互连的嵌入式垂直DRAM阵列公开(公告)号：US06727539B2
公开(公告)日：2004-04-27
申请号：US10147150
申请日：2002-05-16
IPC分类号： H01L27108
CPC分类号： H01L27/10891 , H01L27/10864 , H01L27/10876 , H01L27/10894
摘要： A structure and process for fabricating embedded vertical DRAM cells includes fabricating vertical MOSFET DRAM cells with silicided polysilicon layers in the array regions, the landing pad and/or interconnect structures, the support source and drain regions and/or the gate stack. The process eliminates the need for a M0 metallization layer.
摘要翻译： 用于制造嵌入式垂直DRAM单元的结构和工艺包括在阵列区域中制造具有硅化多晶硅层的垂直MOSFET DRAM单元，着陆焊盘和/或互连结构，支撑源极和漏极区域和/或栅极堆叠。 该工艺消除了对M0金属化层的需要。
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公开(公告)号：US06573137B1
公开(公告)日：2003-06-03
申请号：US09603442
申请日：2000-06-23
申请人： Ramachandra Divakaruni , Jack A. Mandelman , Wolfgang Bergner , Gary B. Bronner , Ulrike Gruening , Stephan Kudelka , Alexander Michaelis , Larry Nesbit , Carl J. Radens , Till Schloesser , Helmut Tews
发明人： Ramachandra Divakaruni , Jack A. Mandelman , Wolfgang Bergner , Gary B. Bronner , Ulrike Gruening , Stephan Kudelka , Alexander Michaelis , Larry Nesbit , Carl J. Radens , Till Schloesser , Helmut Tews
IPC分类号： H01L218242
CPC分类号： H01L27/10864
摘要： A method for clearing an isolation collar from a first interior surface of a deep trench at a location above a storage capacitor while leaving the isolation collar at other surfaces of the deep trench. A barrier material is deposited above a node conductor of the storage capacitor. A layer of silicon is deposited over the barrier material. Dopant ions are implanted at an angle into the layer of deposited silicon within the deep trench, thereby leaving the deposited silicon unimplanted along one side of the deep trench. The unimplanted silicon is etched. The isolation collar is removed in locations previously covered by the unimplanted silicon, leaving the isolation collar in locations covered by the implanted silicon.
摘要翻译： 一种用于在存储电容器上方的位置处从深沟槽的第一内表面清除隔离环的方法，同时将隔离套环留在深沟槽的其它表面。 屏蔽材料沉积在存储电容器的节点导体上方。 一层硅沉积在阻挡材料上。 掺杂离子以一定角度注入到深沟槽内沉积的硅层中，从而留下沉积的硅沿着深沟槽的一侧被植入。 未投影的硅被蚀刻。 隔离套环在先前被未投影硅覆盖的位置上移除，使隔离环位于植入硅覆盖的位置。
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4.发明授权Method of manufacturing 6F2 trench capacitor DRAM cell having vertical MOSFET and 3F bitline pitch 失效制造具有垂直MOSFET和3F位线间距的6F2沟槽电容器DRAM单元的方法公开(公告)号：US06630379B2
公开(公告)日：2003-10-07
申请号：US10011556
申请日：2001-11-06
IPC分类号： H01L218242
CPC分类号： H01L27/10864 , H01L27/10841
摘要： A memory cell structure including a planar semiconductor substrate. A deep trench is in the semiconductor substrate. The deep trench has a plurality of side walls and a bottom. A storage capacitor is at the bottom of the deep trench. A vertical transistor extends down at least one side wall of the deep trench above the storage capacitor. The transistor has a source diffusion extending in the plane of the substrate adjacent the deep trench. An isolation extends down at least one other sidewall of the deep trench opposite the vertical transistor. Shallow trench isolation regions extend along a surface of the substrate in a direction transverse to the sidewall where the vertical transistor extends. A gate conductor extends within the deep trench. A wordline extends over the deep trench and is connected to the gate conductor. A bitline extends above the surface plane of the substrate and has a contact to the source diffusion between the shallow trench isolation regions.
摘要翻译： 一种存储单元结构，包括平面半导体衬底。 深沟槽位于半导体衬底中。 深沟槽具有多个侧壁和底部。 存储电容器位于深沟槽的底部。 垂直晶体管向下延伸存储电容器上方的深沟槽的至少一个侧壁。 晶体管具有在邻近深沟槽的衬底的平面中延伸的源极扩散。 隔离层向下延伸与垂直晶体管相对的深沟槽的至少另一侧壁。 浅沟槽隔离区沿垂直晶体管延伸的横向于侧壁的方向沿着衬底的表面延伸。 栅极导体在深沟槽内延伸。 一条字线延伸穿过深沟槽并连接到栅极导体。 位线延伸在衬底的表面平面之上，并且具有与浅沟槽隔离区之间的源极扩散的接触。
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公开(公告)号：US06759291B2
公开(公告)日：2004-07-06
申请号：US10045499
申请日：2002-01-14
申请人： Ramachandra Divakaruni , Jochen Beintner , Jack A. Mandelman , Ulrike Gruening , Johann Alsmeier , Gary Bronner
发明人： Ramachandra Divakaruni , Jochen Beintner , Jack A. Mandelman , Ulrike Gruening , Johann Alsmeier , Gary Bronner
IPC分类号： H01L218234
CPC分类号： H01L27/10867
摘要： A method and structure for a dynamic random access memory device comprising a storage trench, a storage conductor within the storage trench, a lip strap connected to the storage conductor, and a control device electrically connected to the storage conductor through the lip strap. The trench contains a corner adjacent the control device and the lip strap and has a conductor surrounding the corner. The control device has a control device conductive region adjacent the trench and the lip strap and has a conductor extending along a side of the trench and along a portion of the control device conductive region. In addition, the device can have a collar insulator along a top portion of the trench, wherein the lip strap includes a conductor extending from a top of the collar to a top of the trench. The lip strap can also extend along a surface of the device adjacent the trench and perpendicular to the trench. A node dielectric, lining the trench where the lip strap surrounds an upper portion of the node dielectric, is adjacent the top portion of the trench and can have a trench top oxide where the lip strap extends into the trench top oxide and forms an inverted U-shaped structure. Further, the lip strap can include a conductor extending along two perpendicular portions of a top corner of the trench.
摘要翻译： 一种用于动态随机存取存储器件的方法和结构，包括存储沟槽，存储沟槽内的存储导体，连接到存储导体的唇带，以及通过唇带电连接到存储导体的控制装置。 沟槽包含一个与控制装置和唇带相邻的拐角，并具有围绕拐角的导体。 控制装置具有与沟槽和唇缘相邻的控制装置导电区域，并且具有沿着沟槽的一侧沿着控制装置导电区域的一部分延伸的导体。 此外，该装置可以沿着沟槽的顶部具有环形绝缘体，其中，唇缘带包括从套环的顶部延伸到沟槽的顶部的导体。 唇带还可以沿邻近沟槽的表面延伸并垂直于沟槽。 衬垫在沟槽上的节点电介质，其中唇缘带围绕节点电介质的上部，与沟槽的顶部部分相邻，并且可以具有沟槽顶部氧化物，其中唇缘带延伸到沟槽顶部氧化物中并形成倒U形 形结构。 此外，唇带可以包括沿着沟槽的顶角的两个垂直部分延伸的导体。
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公开(公告)号：US06376324B1
公开(公告)日：2002-04-23
申请号：US09602969
申请日：2000-06-23
IPC分类号： H01L2120
CPC分类号： H01L27/10867
摘要： Disclosed is a method to provide a new deep trench collar process which reduces encroachment of strap diffusion upon array metal oxide semiconductor field effect transistors (MOSFET's) in semiconductor devices. The invention allows a reduced effective deep trench edge bias at the top of the deep trench, without compromising storage capacitance, by maximizing the distance between the MOSFET gate conductor and the deep trench storage capacitor.
摘要翻译： 公开了一种提供新的深沟槽套环工艺的方法，其减少了半导体器件中的阵列金属氧化物半导体场效应晶体管（MOSFET）上带扩散的侵入。 通过使MOSFET栅极导体和深沟槽存储电容器之间的距离最大化，本发明允许在深沟槽顶部减少有效的深沟槽边缘偏压，而不损害存储电容。
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公开(公告)号：US06369419B1
公开(公告)日：2002-04-09
申请号：US09603657
申请日：2000-06-23
申请人： Ramachandra Divakaruni , Jochen Beintner , Jack A. Mandelman , Ulrike Gruening , Johann Alsmeier , Gary Bronner
发明人： Ramachandra Divakaruni , Jochen Beintner , Jack A. Mandelman , Ulrike Gruening , Johann Alsmeier , Gary Bronner
IPC分类号： H01L2994
CPC分类号： H01L27/10867
摘要： A method and structure for a dynamic random access memory device comprising a storage trench, a storage conductor within the storage trench, a lip strap connected to the storage conductor, and a control device electrically connected to the storage conductor through the lip strap. The trench contains a corner adjacent the control device and the lip strap and has a conductor surrounding the corner. The control device has a control device conductive region adjacent the trench and the lip strap and has a conductor extending along a side of the trench and along a portion of the control device conductive region. In addition, the device can have a collar insulator along a top portion of the trench, wherein the lip strap includes a conductor extending from a top of the collar to a top of the trench. The lip strap can also extend along a surface of the device adjacent the trench and perpendicular to the trench. A node dielectric, lining the trench where the lip strap surrounds an upper portion of the node dielectric, is adjacent the top portion of the trench and can have a trench top oxide where the lip strap extends into the trench top oxide and forms an inverted U-shaped structure. Further, the lip strap can include a conductor extending along two perpendicular portions of a top corner of the trench.
摘要翻译： 一种用于动态随机存取存储器件的方法和结构，包括存储沟槽，存储沟槽内的存储导体，连接到存储导体的唇带，以及通过唇带电连接到存储导体的控制装置。 沟槽包含一个与控制装置和唇带相邻的拐角，并具有围绕拐角的导体。 控制装置具有与沟槽和唇缘相邻的控制装置导电区域，并且具有沿着沟槽的一侧沿着控制装置导电区域的一部分延伸的导体。 此外，该装置可以沿着沟槽的顶部具有环形绝缘体，其中，唇缘带包括从套环的顶部延伸到沟槽的顶部的导体。 唇带还可以沿邻近沟槽的表面延伸并垂直于沟槽。 衬垫在沟槽上的节点电介质，其中唇缘带围绕节点电介质的上部，与沟槽的顶部部分相邻，并且可以具有沟槽顶部氧化物，其中唇缘带延伸到沟槽顶部氧化物中并形成倒U形 形结构。 此外，唇带可以包括沿着沟槽的顶角的两个垂直部分延伸的导体。
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8.发明授权Process for 4F2 STC cell having vertical MOSFET and buried-bitline conductor structure 失效具有垂直MOSFET和埋地位线导体结构的4F2 STC电池的工艺公开(公告)号：US06348374B1
公开(公告)日：2002-02-19
申请号：US09597887
申请日：2000-06-19
申请人： Satish D. Athavale , Gary B. Bronner , Ramachandra Divakaruni , Ulrike Gruening , Jack A. Mandelman , Carl J. Radens
发明人： Satish D. Athavale , Gary B. Bronner , Ramachandra Divakaruni , Ulrike Gruening , Jack A. Mandelman , Carl J. Radens
IPC分类号： H01L218242
CPC分类号： H01L27/10876 , H01L27/10814 , H01L27/10823 , H01L27/10885
摘要： A method of forming a vertical transistor. A pad layer is formed over a semiconductor substrate. A trough is formed through the pad layer and in the semiconductor substrate. A bit line is formed buried in the trough. The bit line is enclosed by a dielectric material. A strap is formed extending through the dielectric material to connect the bit line to the semiconductor substrate. The trough is filled above the bit line with a conductor. The conductor is cut along its longitudinal axis such that the conductor remains on one side of the trough. Wordline troughs are formed, substantially orthogonal to the bit line, above the semiconductor substrate. A portion of the conductor is removed under the wordline trough to separate the conductor into separate gate conductors. Wordlines are formed in the wordline trough connected to the separate gate conductors.
摘要翻译： 一种形成垂直晶体管的方法。 在半导体衬底上形成衬垫层。 通过焊盘层和半导体衬底形成槽。 埋在槽中的位线形成。 位线被电介质材料包围。 形成延伸穿过介电材料的带，以将位线连接到半导体衬底。 槽被填充在位线上方的导体。 导体沿其纵向轴线切割，使得导体保持在槽的一侧。 在半导体衬底之上形成基本上与位线正交的字线槽。 导体的一部分在字线槽下移除，以将导体分离成单独的栅极导体。 字线形成在连接到单独的栅极导体的字线槽中。
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公开(公告)号：US06258659B1
公开(公告)日：2001-07-10
申请号：US09725412
申请日：2000-11-29
IPC分类号： H01L218242
CPC分类号： H01L27/10894 , H01L27/10864 , H01L27/10885 , H01L27/10891
摘要： A process for producing very high-density embedded DRAM/very high-performance logic structures comprising fabricating vertical MOSFET DRAM cells with salicided source/drain and gate conductor dual workfunction MOSFETs in the supports.
摘要翻译： 一种用于生产非常高密度嵌入式DRAM /非常高性能逻辑结构的方法，包括在支撑体中制造具有水银源/漏极和栅极导体双功函数MOSFET的垂直MOSFET DRAM单元。
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10.发明授权公开(公告)号：US06339241B1
公开(公告)日：2002-01-15
申请号：US09602426
申请日：2000-06-23
IPC分类号： H01L27108
CPC分类号： H01L27/10864 , H01L27/10841
摘要： A memory cell structure including a planar semiconductor substrate. A deep trench is in the semiconductor substrate. The deep trench has a plurality of side walls and a bottom. A storage capacitor is at the bottom of the deep trench. A vertical transistor extends down at least one side wall of the deep trench above the storage capacitor. The transistor has a source diffusion extending in the plane of the substrate adjacent the deep trench. An isolation extends down at least one other sidewall of the deep trench opposite the vertical transistor. Shallow trench isolation regions extend along a surface of the substrate in a direction transverse to the sidewall where the vertical transistor extends. A gate conductor extends within the deep trench. A wordline extends over the deep trench and is connected to the gate conductor. A bitline extends above the surface plane of the substrate and has a contact to the source diffusion between the shallow trench isolation regions.
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