公开(公告)号：US07794574B2

公开(公告)日：2010-09-14

申请号：US11107110

申请日：2005-04-14

申请人： Ravi Mullapudi ,  Dean Smith ,  Srikanth Dasaradhi

发明人： Ravi Mullapudi ,  Dean Smith ,  Srikanth Dasaradhi

IPC分类号： C23C14/00

CPC分类号： C23C14/505 ,  C23C14/352 ,  H01J37/3447

摘要： A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers can be transferred between the two chambers by a robotic arm without breaking a vacuum. The wafers are mounted one-by-one onto a rotating pallet in the pre-cleaning chamber and sputtering chamber. The pallet is firmly fixed to a rotatable table in the sputtering chamber. Copper tubing in the table couples RF energy to the wafers, and a liquid running through the copper tubing controls the temperature of the wafers. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets for uniform target erosion and uniform deposition on the wafers. An electrically insulated target backing plate between each magnet and a target has a liquid channel running through it for controlling temperature. The distance between the magnets and the targets is made very small by a thin aluminum plate fixed to the bottom segment of the target backing plate by a dip brazing process. Various shields are described to prevent cross-contamination from the targets and prevent the sputtered target material from entering gaps in the chamber and shorting out insulators.

摘要翻译： 描述了用于在真空室中一次在多个工件（晶片，显示面板或任何其他工件）上沉积材料的多室处理系统。 该系统包括溅射室和单独的预清洁室，其中晶片可以通过机器臂在两个室之间传递而不破坏真空。 将晶片一个接一个地安装在预清洁室和溅射室中的旋转托盘上。 托盘牢固地固定在溅射室中的可旋转工作台上。 表中的铜管将RF能量耦合到晶片，并且穿过铜管的液体控制晶片的温度。 相同或不同材料的多个目标可以在托盘旋转的同时将材料沉积在晶片上。 在溅射室中的磁控管组件中的多个磁体（一个用于每个靶）在其各自的靶上摆动，以均匀的目标腐蚀和在晶片上的均匀沉积。 在每个磁体和靶之间的电绝缘的目标背板具有通过其的液体通道用于控制温度。 通过浸焊法将固定在目标背板底部的薄铝板，将磁体和靶材之间的距离做得非常小。 描述了各种屏蔽，以防止目标的交叉污染，并防止溅射的目标材料进入腔室中的间隙并使绝缘体短路。

公开(公告)号：US07682495B2

公开(公告)日：2010-03-23

申请号：US11107620

申请日：2005-04-14

申请人： Ravi Mullapudi ,  Dean Smith ,  Srikanth Dasaradhi

发明人： Ravi Mullapudi ,  Dean Smith ,  Srikanth Dasaradhi

IPC分类号： C23C14/00

CPC分类号： H01J37/3408 ,  C23C14/021 ,  C23C14/35 ,  C23C14/566

摘要： A processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate back and forth across an arc over their respective targets for uniform target erosion and uniform deposition on the wafers.

摘要翻译： 描述了用于在真空室中一次沉积多个工件（晶片，显示面板或任何其他工件）上的材料的处理系统。 相同或不同材料的多个靶材可以在托盘旋转的同时将材料沉积在晶片上。 溅射室中的磁控管组件中的多个磁体（每个目标一个磁体）在其各自的目标上来回振荡，以均匀的目标侵蚀和在晶片上的均匀沉积。

公开(公告)号：US20060231393A1

公开(公告)日：2006-10-19

申请号：US11107108

申请日：2005-04-14

申请人： Ravi Mullapudi ,  Dean Smith ,  Srikanth Dasaradhi

发明人： Ravi Mullapudi ,  Dean Smith ,  Srikanth Dasaradhi

IPC分类号： C23C14/00

CPC分类号： H01J37/3497 ,  H01J37/3435

摘要： A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers can be transferred between the two chambers by a robotic arm without breaking a vacuum. The wafers are mounted one-by-one onto a rotating pallet in the pre-cleaning chamber and sputtering chamber. The pallet is firmly fixed to a rotatable table in the sputtering chamber. Copper tubing in the table couples RF energy to the wafers, and a liquid running through the copper tubing controls the temperature of the wafers. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets for uniform target erosion and uniform deposition on the wafers. An electrically insulated target backing plate between each magnet and a target has a liquid channel running through it for controlling temperature. The distance between the magnets and the targets is made very small by a thin aluminum plate fixed to the bottom segment of the target backing plate by a dip brazing process. Various shields are described to prevent cross-contamination from the targets and prevent the sputtered target material from entering gaps in the chamber and shorting out insulators.

摘要翻译： 描述了用于在真空室中一次在多个工件（晶片，显示面板或任何其他工件）上沉积材料的多室处理系统。 该系统包括溅射室和单独的预清洁室，其中晶片可以通过机器臂在两个室之间传递而不破坏真空。 将晶片一个接一个地安装在预清洁室和溅射室中的旋转托盘上。 托盘牢固地固定在溅射室中的可旋转工作台上。 表中的铜管将RF能量耦合到晶片，并且穿过铜管的液体控制晶片的温度。 相同或不同材料的多个目标可以在托盘旋转的同时将材料沉积在晶片上。 在溅射室中的磁控管组件中的多个磁体（一个用于每个靶）在其各自的靶上摆动，以均匀的目标腐蚀和在晶片上的均匀沉积。 在每个磁体和靶之间的电绝缘的目标背板具有通过其的液体通道用于控制温度。 通过浸焊法将固定在目标背板底部的薄铝板，将磁体和靶材之间的距离做得非常小。 描述了各种屏蔽，以防止目标的交叉污染，并防止溅射的目标材料进入腔室中的间隙并使绝缘体短路。

公开(公告)号：US20120085638A1

公开(公告)日：2012-04-12

申请号：US13328914

申请日：2011-12-16

申请人： Ravi Mullapudi ,  Dean Smith ,  Edward Strepka ,  Srikanth Dasaradhi

发明人： Ravi Mullapudi ,  Dean Smith ,  Edward Strepka ,  Srikanth Dasaradhi

IPC分类号： C23C14/34

CPC分类号： C23C14/505 ,  C23C14/022 ,  C23C14/352 ,  C23C14/56 ,  H01J37/32743 ,  H01L21/6719 ,  H01L21/68785 ,  H01L21/68792

摘要： A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers can be transferred between the two chambers by a robotic arm without breaking a vacuum. The wafers are mounted one-by-one onto a rotating first pallet in the pre-cleaning chamber through a single entrance/exit port. After a batch cleaning, the robotic arm transfers the wafers one-by-one to a rotating second pallet in a sputtering chamber through a single entrance/exit, where the wafers are subjected to a batch sputtering process. After the sputtering process, the robotic arm transfers the wafers one-by-one to a load lock.

摘要翻译： 描述了用于在真空室中一次在多个工件（晶片，显示面板或任何其他工件）上沉积材料的多室处理系统。 该系统包括溅射室和单独的预清洁室，其中晶片可以通过机器臂在两个室之间传递而不破坏真空。 晶片通过单个入口/出口端口一个接一个地安装在预清洁室中的旋转的第一托盘上。 在批量清洗之后，机器手臂将晶片通过单个入口/出口将晶片一个接一个地转移到溅射室中的旋转第二托盘，其中晶片经受分批溅射工艺。 在溅射过程之后，机器人臂将晶片一个接一个地传送到一个负载锁定。

公开(公告)号：US08092659B2

公开(公告)日：2012-01-10

申请号：US12357351

申请日：2009-01-21

申请人： Ravi Mullapudi ,  Dean Smith ,  Edward Strepka ,  Srikanth Dasaradhi

发明人： Ravi Mullapudi ,  Dean Smith ,  Edward Strepka ,  Srikanth Dasaradhi

IPC分类号： C23C14/34

CPC分类号： C23C14/505 ,  C23C14/022 ,  C23C14/352 ,  C23C14/56 ,  H01J37/32743 ,  H01L21/6719 ,  H01L21/68785 ,  H01L21/68792

摘要： A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers can be transferred between the two chambers by a robotic arm without breaking a vacuum. The wafers are mounted one-by-one onto a rotating pallet in the pre-cleaning chamber and sputtering chamber. The pallet is firmly fixed to a rotatable table in the sputtering chamber. Copper tubing in the table couples RF energy to the wafers, and a liquid running through the copper tubing controls the temperature of the wafers. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets for uniform target erosion and uniform deposition on the wafers. An electrically insulated target backing plate between each magnet and a target has a liquid channel running through it for controlling temperature. The distance between the magnets and the targets is made very small by a thin aluminum plate fixed to the bottom segment of the target backing plate by a dip brazing process. Various shields are described to prevent cross-contamination from the targets and prevent the sputtered target material from entering gaps in the chamber and shorting out insulators.

摘要翻译： 描述了用于在真空室中一次在多个工件（晶片，显示面板或任何其他工件）上沉积材料的多室处理系统。 该系统包括溅射室和单独的预清洁室，其中晶片可以通过机器臂在两个室之间传递而不破坏真空。 将晶片一个接一个地安装在预清洁室和溅射室中的旋转托盘上。 托盘牢固地固定在溅射室中的可旋转工作台上。 表中的铜管将RF能量耦合到晶片，并且穿过铜管的液体控制晶片的温度。 相同或不同材料的多个目标可以在托盘旋转的同时将材料沉积在晶片上。 在溅射室中的磁控管组件中的多个磁体（一个用于每个靶）在其各自的靶上摆动，以均匀的目标腐蚀和在晶片上的均匀沉积。 在每个磁体和靶之间的电绝缘的目标背板具有通过其的液体通道用于控制温度。 通过浸焊法将固定在目标背板底部的薄铝板，将磁体和靶材之间的距离做得非常小。 描述了各种屏蔽，以防止目标的交叉污染，并防止溅射的目标材料进入腔室中的间隙并使绝缘体短路。

公开(公告)号：US20090127099A1

公开(公告)日：2009-05-21

申请号：US12357351

申请日：2009-01-21

申请人： Ravi Mullapudi ,  Dean Smith ,  Edward Strepka ,  Srikanth Dasaradhi

发明人： Ravi Mullapudi ,  Dean Smith ,  Edward Strepka ,  Srikanth Dasaradhi

IPC分类号： C23C14/34

CPC分类号： C23C14/505 ,  C23C14/022 ,  C23C14/352 ,  C23C14/56 ,  H01J37/32743 ,  H01L21/6719 ,  H01L21/68785 ,  H01L21/68792

摘要： A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers can be transferred between the two chambers by a robotic arm without breaking a vacuum. The wafers are mounted one-by-one onto a rotating pallet in the pre-cleaning chamber and sputtering chamber. The pallet is firmly fixed to a rotatable table in the sputtering chamber. Copper tubing in the table couples RF energy to the wafers, and a liquid running through the copper tubing controls the temperature of the wafers. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets for uniform target erosion and uniform deposition on the wafers. An electrically insulated target backing plate between each magnet and a target has a liquid channel running through it for controlling temperature. The distance between the magnets and the targets is made very small by a thin aluminum plate fixed to the bottom segment of the target backing plate by a dip brazing process. Various shields are described to prevent cross-contamination from the targets and prevent the sputtered target material from entering gaps in the chamber and shorting out insulators.

摘要翻译： 描述了用于在真空室中一次在多个工件（晶片，显示面板或任何其他工件）上沉积材料的多室处理系统。 该系统包括溅射室和单独的预清洁室，其中晶片可以通过机器臂在两个室之间传递而不破坏真空。 将晶片一个接一个地安装在预清洁室和溅射室中的旋转托盘上。 托盘牢固地固定在溅射室中的可旋转工作台上。 表中的铜管将RF能量耦合到晶片，并且穿过铜管的液体控制晶片的温度。 相同或不同材料的多个目标可以在托盘旋转的同时将材料沉积在晶片上。 在溅射室中的磁控管组件中的多个磁体（一个用于每个靶）在其各自的靶上摆动，以均匀的目标腐蚀和在晶片上的均匀沉积。 在每个磁体和靶之间的电绝缘的目标背板具有通过其的液体通道用于控制温度。 通过浸焊法将固定在目标背板底部的薄铝板，将磁体和靶材之间的距离做得非常小。 描述了各种屏蔽，以防止目标的交叉污染，并防止溅射的目标材料进入腔室中的间隙并使绝缘体短路。

公开(公告)号：US07799190B2

公开(公告)日：2010-09-21

申请号：US11107108

申请日：2005-04-14

申请人： Ravi Mullapudi ,  Dean Smith ,  Srikanth Dasaradhi

发明人： Ravi Mullapudi ,  Dean Smith ,  Srikanth Dasaradhi

IPC分类号： C23C14/00

CPC分类号： H01J37/3497 ,  H01J37/3435

摘要： A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets for uniform target erosion and uniform deposition on the wafers. An electrically insulated target backing plate between each magnet and a target has a liquid channel running through it for controlling temperature, where the liquid channel has a wider cross-sectional area around the middle portion of the target backing plate to increase cooling of the middle portion of the target. The distance between the magnets and the targets is made very small by a thin aluminum plate fixed to the bottom segment of the target backing plate by a dip brazing process.

摘要翻译： 描述了用于在真空室中一次在多个工件（晶片，显示面板或任何其他工件）上沉积材料的多室处理系统。 在溅射室中的磁控管组件中的多个磁体（一个用于每个靶）在其各自的靶上摆动，以均匀的目标腐蚀和在晶片上的均匀沉积。 在每个磁体和靶之间的电绝缘的目标背板具有通过其的液体通道用于控制温度，其中液体通道在目标背板的中间部分周围具有较宽的横截面积，以增加中间部分的冷却 的目标。 通过浸焊法将固定在目标背板底部的薄铝板，将磁体和靶材之间的距离做得非常小。

公开(公告)号：US20060231388A1

公开(公告)日：2006-10-19

申请号：US11107109

申请日：2005-04-14

申请人： Ravi Mullapudi ,  Dean Smith ,  Edward Strepka ,  Srikanth Dasaradhi

发明人： Ravi Mullapudi ,  Dean Smith ,  Edward Strepka ,  Srikanth Dasaradhi

IPC分类号： C23C14/00

CPC分类号： C23C14/505 ,  C23C14/022 ,  C23C14/352 ,  C23C14/56 ,  H01J37/32743 ,  H01L21/6719 ,  H01L21/68785 ,  H01L21/68792

摘要： A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers can be transferred between the two chambers by a robotic arm without breaking a vacuum. The wafers are mounted one-by-one onto a rotating pallet in the pre-cleaning chamber and sputtering chamber. The pallet is firmly fixed to a rotatable table in the sputtering chamber. Copper tubing in the table couples RF energy to the wafers, and a liquid running through the copper tubing controls the temperature of the wafers. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets for uniform target erosion and uniform deposition on the wafers. An electrically insulated target backing plate between each magnet and a target has a liquid channel running through it for controlling temperature. The distance between the magnets and the targets is made very small by a thin aluminum plate fixed to the bottom segment of the target backing plate by a dip brazing process. Various shields are described to prevent cross-contamination from the targets and prevent the sputtered target material from entering gaps in the chamber and shorting out insulators.

摘要翻译： 描述了用于在真空室中一次在多个工件（晶片，显示面板或任何其他工件）上沉积材料的多室处理系统。 该系统包括溅射室和单独的预清洁室，其中晶片可以通过机器臂在两个室之间传递而不破坏真空。 将晶片一个接一个地安装在预清洁室和溅射室中的旋转托盘上。 托盘牢固地固定在溅射室中的可旋转工作台上。 表中的铜管将RF能量耦合到晶片，并且穿过铜管的液体控制晶片的温度。 相同或不同材料的多个目标可以在托盘旋转的同时将材料沉积在晶片上。 在溅射室中的磁控管组件中的多个磁体（一个用于每个靶）在其各自的靶上摆动，以均匀的目标腐蚀和在晶片上的均匀沉积。 在每个磁体和靶之间的电绝缘的目标背板具有通过其的液体通道用于控制温度。 通过浸焊法将固定在目标背板底部的薄铝板，将磁体和靶材之间的距离做得非常小。 描述了各种屏蔽，以防止目标的交叉污染，并防止溅射的目标材料进入腔室中的间隙并使绝缘体短路。

公开(公告)号：US20060231391A1

公开(公告)日：2006-10-19

申请号：US11107110

申请日：2005-04-14

申请人： Ravi Mullapudi ,  Dean Smith ,  Srikanth Dasaradhi

发明人： Ravi Mullapudi ,  Dean Smith ,  Srikanth Dasaradhi

IPC分类号： C23C14/00

CPC分类号： C23C14/505 ,  C23C14/352 ,  H01J37/3447

摘要： A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers can be transferred between the two chambers by a robotic arm without breaking a vacuum. The wafers are mounted one-by-one onto a rotating pallet in the pre-cleaning chamber and sputtering chamber. The pallet is firmly fixed to a rotatable table in the sputtering chamber. Copper tubing in the table couples RF energy to the wafers, and a liquid running through the copper tubing controls the temperature of the wafers. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets for uniform target erosion and uniform deposition on the wafers. An electrically insulated target backing plate between each magnet and a target has a liquid channel running through it for controlling temperature. The distance between the magnets and the targets is made very small by a thin aluminum plate fixed to the bottom segment of the target backing plate by a dip brazing process. Various shields are described to prevent cross-contamination from the targets and prevent the sputtered target material from entering gaps in the chamber and shorting out insulators.

摘要翻译： 描述了用于在真空室中一次在多个工件（晶片，显示面板或任何其他工件）上沉积材料的多室处理系统。 该系统包括溅射室和单独的预清洁室，其中晶片可以通过机器臂在两个室之间传递而不破坏真空。 将晶片一个接一个地安装在预清洁室和溅射室中的旋转托盘上。 托盘牢固地固定在溅射室中的可旋转工作台上。 表中的铜管将RF能量耦合到晶片，并且穿过铜管的液体控制晶片的温度。 相同或不同材料的多个目标可以在托盘旋转的同时将材料沉积在晶片上。 在溅射室中的磁控管组件中的多个磁体（一个用于每个靶）在其各自的靶上摆动，以均匀的目标腐蚀和在晶片上的均匀沉积。 在每个磁体和靶之间的电绝缘的目标背板具有通过其的液体通道用于控制温度。 通过浸焊法将固定在目标背板底部的薄铝板，将磁体和靶材之间的距离做得非常小。 描述了各种屏蔽，以防止目标的交叉污染，并防止溅射的目标材料进入腔室中的间隙并使绝缘体短路。

公开(公告)号：US20060231383A1

公开(公告)日：2006-10-19

申请号：US11107620

申请日：2005-04-14

申请人： Ravi Mullapudi ,  Dean Smith ,  Srikanth Dasaradhi

发明人： Ravi Mullapudi ,  Dean Smith ,  Srikanth Dasaradhi

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： H01J37/3408 ,  C23C14/021 ,  C23C14/35 ,  C23C14/566

摘要： A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers can be transferred between the two chambers by a robotic arm without breaking a vacuum. The wafers are mounted one-by-one onto a rotating pallet in the pre-cleaning chamber and sputtering chamber. The pallet is firmly fixed to a rotatable table in the sputtering chamber. Copper tubing in the table couples RF energy to the wafers, and a liquid running through the copper tubing controls the temperature of the wafers. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets for uniform target erosion and uniform deposition on the wafers. An electrically insulated target backing plate between each magnet and a target has a liquid channel running through it for controlling temperature. The distance between the magnets and the targets is made very small by a thin aluminum plate fixed to the bottom segment of the target backing plate by a dip brazing process. Various shields are described to prevent cross-contamination from the targets and prevent the sputtered target material from entering gaps in the chamber and shorting out insulators.

摘要翻译： 描述了用于在真空室中一次在多个工件（晶片，显示面板或任何其他工件）上沉积材料的多室处理系统。 该系统包括溅射室和单独的预清洁室，其中晶片可以通过机器臂在两个室之间传递而不破坏真空。 将晶片一个接一个地安装在预清洁室和溅射室中的旋转托盘上。 托盘牢固地固定在溅射室中的可旋转工作台上。 表中的铜管将RF能量耦合到晶片，并且穿过铜管的液体控制晶片的温度。 相同或不同材料的多个目标可以在托盘旋转的同时将材料沉积在晶片上。 在溅射室中的磁控管组件中的多个磁体（一个用于每个靶）在其各自的靶上摆动，以均匀的目标腐蚀和在晶片上的均匀沉积。 在每个磁体和靶之间的电绝缘的目标背板具有通过其的液体通道用于控制温度。 通过浸焊法将固定在目标背板底部的薄铝板，将磁体和靶材之间的距离做得非常小。 描述了各种屏蔽，以防止目标的交叉污染，并防止溅射的目标材料进入腔室中的间隙并使绝缘体短路。