公开(公告)号：US11545566B2

公开(公告)日：2023-01-03

申请号：US16727252

申请日：2019-12-26

Applicant: Raytheon Company

Inventor： Abbas Torabi ,  Brian D. Schultz ,  John Logan

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/20

Abstract: A High Electron Mobility Transistor structure having: a GaN buffer layer disposed on the substrate; a doped GaN layer disposed on, and in direct contact with, the buffer layer, such doped GaN layer being doped with more than one different dopants; an unintentionally doped (UID) GaN channel layer on, and in direct contact with, the doped GaN layer, such UID GaN channel layer having a 2DEG channel therein; a barrier layer on, and in direct contact with, the UID GaN channel layer. One of the dopants is beryllium and another one of the dopants is carbon.

公开(公告)号：US20210202729A1

公开(公告)日：2021-07-01

申请号：US16727252

申请日：2019-12-26

Applicant: Raytheon Company

Inventor： Abbas Torabi ,  Brian D. Schultz ,  John Logan

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/20

Abstract: A High Electron Mobility Transistor structure having: a GaN buffer layer disposed on the substrate; a doped GaN layer disposed on, and in direct contact with, the buffer layer, such doped GaN layer being doped with more than one different dopants; an unintentionally doped (UID) GaN channel layer on, and in direct contact with, the doped GaN layer, such UID GaN channel layer having a 2DEG channel therein; a barrier layer on, and in direct contact with, the UID GaN channel layer. One of the dopants is beryllium and another one of the dopants is carbon.

公开(公告)号：US09419125B1

公开(公告)日：2016-08-16

申请号：US14740703

申请日：2015-06-16

Applicant: Raytheon Company

Inventor： Brian D. Schultz ,  Abbas Torabi ,  Eduardo M. Chumbes ,  Shahed Reza ,  William E. Hoke

IPC: H01L29/00 ,  H01L21/00 ,  H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/207 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L21/0254 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/36 ,  H01L29/7781 ,  H01L29/7786

Abstract: A semiconductor structure having a Group III-N buffer layer and a Group III-N barrier layer in direct contact to form a junction between the Group III-V buffer layer the Group III-N barrier layer producing a two dimensional electron gas (2DEG) channel, the Group III-N barrier layer having a varying dopant concentration. The lower region of the Group III-N barrier layer closest to the junction is void of intentionally introduced dopant and a region above the lower region having intentionally introduced, predetermined dopant with a predetermined doping concentration above 1×1017 atoms per cm3.

Abstract translation: 具有直接接触的III-N族缓冲层和III-N族阻挡层的半导体结构，以形成产生二维电子气（2DEG）的III-V族阻挡层的III-V族缓冲层之间的结， 通道，具有改变掺杂剂浓度的III-N族阻挡层。 最接近结的III-N族阻挡层的下部区域没有有意引入的掺杂剂和有意引入预定掺杂剂的下部区域上方的区域，其预定掺杂浓度高于1×1017原子/ cm3。