公开(公告)号：US11682721B2

公开(公告)日：2023-06-20

申请号：US17152956

申请日：2021-01-20

Applicant: Raytheon Company

Inventor： Matthew Thomas Dejarld ,  John P. Bettencourt ,  Adam Lyle Moldawer ,  Kenneth A. Wilson

IPC: H01L29/778 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L21/285

CPC classification number: H01L29/7786 ,  H01L21/28593 ,  H01L29/401 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462

Abstract: A high electron mobility transistor (HEMT) includes a substrate; a source on the substrate; a drain on the substrate spaced from the source; and a gate between the source and the drain, wherein the gate has a stem contacting the substrate, the stem having a source side surface and a drain side surface, wherein a source side angle is defined between the source side surface and an upper planar surface of the substrate and a drain side angle is defined between the drain side surface and the upper planar surface of the substrate, and wherein the source side angle and the drain side angle are asymmetric. Methods for making the HEMT are also disclosed.

公开(公告)号：US20220231154A1

公开(公告)日：2022-07-21

申请号：US17152956

申请日：2021-01-20

Applicant: Raytheon Company

Inventor： Matthew Thomas Dejarld ,  John P. Bettencourt ,  Adam Lyle Moldawer ,  Kenneth A. Wilson

IPC: H01L29/778 ,  H01L29/66

Abstract: A high electron mobility transistor (HEMT) includes a substrate; a source on the substrate; a drain on the substrate spaced from the source; and a gate between the source and the drain, wherein the gate has a stem contacting the substrate, the stem having a source side surface and a drain side surface, wherein a source side angle is defined between the source side surface and an upper planar surface of the substrate and a drain side angle is defined between the drain side surface and the upper planar surface of the substrate, and wherein the source side angle and the drain side angle are asymmetric. Methods for making the HEMT are also disclosed.