公开(公告)号：US20240072130A1

公开(公告)日：2024-02-29

申请号：US17822937

申请日：2022-08-29

Applicant: Raytheon Company

Inventor： Matthew Thomas Dejarld ,  Eduardo M. Chumbes ,  Maher Bishara Tahhan ,  David Patrick Hunley

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L29/404 ,  H01L29/2003 ,  H01L29/66462

Abstract: A transistor and method of fabricating the same comprising a channel layer; an epitaxial barrier layer on the channel layer; an epitaxial cap layer on the epitaxial barrier layer; a dielectric layer on the epitaxial cap layer having an opening through to the epitaxial barrier layer; a gate having angled sidewalls in the opening of the dielectric layer; a mini field plate having angled sidewalls on the gate; and a gate top on the mini field plate, wherein the gate, the mini field plate, and the gate top form a “T” shape.

公开(公告)号：US11682721B2

公开(公告)日：2023-06-20

申请号：US17152956

申请日：2021-01-20

Applicant: Raytheon Company

Inventor： Matthew Thomas Dejarld ,  John P. Bettencourt ,  Adam Lyle Moldawer ,  Kenneth A. Wilson

IPC: H01L29/778 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L21/285

CPC classification number: H01L29/7786 ,  H01L21/28593 ,  H01L29/401 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462

Abstract: A high electron mobility transistor (HEMT) includes a substrate; a source on the substrate; a drain on the substrate spaced from the source; and a gate between the source and the drain, wherein the gate has a stem contacting the substrate, the stem having a source side surface and a drain side surface, wherein a source side angle is defined between the source side surface and an upper planar surface of the substrate and a drain side angle is defined between the drain side surface and the upper planar surface of the substrate, and wherein the source side angle and the drain side angle are asymmetric. Methods for making the HEMT are also disclosed.

公开(公告)号：US20220231154A1

公开(公告)日：2022-07-21

申请号：US17152956

申请日：2021-01-20

Applicant: Raytheon Company

Inventor： Matthew Thomas Dejarld ,  John P. Bettencourt ,  Adam Lyle Moldawer ,  Kenneth A. Wilson

IPC: H01L29/778 ,  H01L29/66

Abstract: A high electron mobility transistor (HEMT) includes a substrate; a source on the substrate; a drain on the substrate spaced from the source; and a gate between the source and the drain, wherein the gate has a stem contacting the substrate, the stem having a source side surface and a drain side surface, wherein a source side angle is defined between the source side surface and an upper planar surface of the substrate and a drain side angle is defined between the drain side surface and the upper planar surface of the substrate, and wherein the source side angle and the drain side angle are asymmetric. Methods for making the HEMT are also disclosed.