公开(公告)号：US20150255842A1

公开(公告)日：2015-09-10

申请号：US14196691

申请日：2014-03-04

Applicant: RAYTHEON COMPANY

Inventor： Shahed Reza ,  Michael F. Parkes ,  Kenneth A. Wilson

IPC: H04B3/28 ,  H01P1/162 ,  H01P3/00

CPC classification number: H01P1/162 ,  H01P3/003

Abstract: A transmission line structure having a pair of separated coplanar waveguide transmissions line section. A coupling circuit is coupled between the pair of coplanar waveguide transmissions line sections, the coupling circuit suppresses common mode signals therein and passes, substantially unsuppressed, differential mode signal transmission between the pair of coplanar waveguide transmissions line sections.

Abstract translation: 一种具有一对分离的共面波导传输线段的传输线结构。 耦合电路耦合在一对共面波导传输线路段之间，耦合电路抑制其中的共模信号并且在该对共面波导传输线路段之间通过基本上未压制的差模信号传输。

公开(公告)号：US09484609B2

公开(公告)日：2016-11-01

申请号：US14196691

申请日：2014-03-04

Applicant: Raytheon Company

Inventor： Shahed Reza ,  Michael F. Parkes ,  Kenneth A. Wilson

IPC: H04B3/28 ,  H01P1/162 ,  H01P3/00

CPC classification number: H01P1/162 ,  H01P3/003

Abstract: A transmission line structure having a pair of separated coplanar waveguide transmissions line section. A coupling circuit is coupled between the pair of coplanar waveguide transmissions line sections, the coupling circuit suppresses common mode signals therein and passes, substantially unsuppressed, differential mode signal transmission between the pair of coplanar waveguide transmissions line sections.

Abstract translation: 一种具有一对分离的共面波导传输线段的传输线结构。 耦合电路耦合在一对共面波导传输线路段之间，耦合电路抑制其中的共模信号并且在该对共面波导传输线路段之间通过基本上未压制的差模信号传输。

公开(公告)号：US10720497B2

公开(公告)日：2020-07-21

申请号：US15791771

申请日：2017-10-24

Applicant: Raytheon Company

Inventor： Christopher J. MacDonald ,  Kenneth A. Wilson ,  Kamal Tabatabaie Alavi ,  Adrian D. Williams

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/205 ,  H01L21/311 ,  H01L29/66 ,  H01L29/778 ,  H01L23/31

Abstract: A Field Effect Transistor (FET) having a source, drain, and gate disposed laterally along a surface of a semiconductor and a field plate structure: having one end connected to the source; and having a second end disposed between the gate and the drain and separated from the drain by a gap. A dielectric structure is disposed over the semiconductor, having: a first portion disposed under the second end of the field plate structure; and, a second, thinner portion under the gap.

公开(公告)号：US20190123150A1

公开(公告)日：2019-04-25

申请号：US15791771

申请日：2017-10-24

Applicant: Raytheon Company

Inventor： Christopher J. MacDonald ,  Kenneth A. Wilson ,  Kamal Tabatabaie Alavi ,  Adrian D. Williams

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  H01L29/66 ,  H01L21/311

Abstract: A Field Effect Transistor (FET) having a source, drain, and gate disposed laterally along a surface of a semiconductor and a field plate structure: having one end connected to the source; and having a second end disposed between the gate and the drain and separated from the drain by a gap. A dielectric structure is disposed over the semiconductor, having: a first portion disposed under the second end of the field plate structure; and, a second, thinner portion under the gap.

公开(公告)号：US11682721B2

公开(公告)日：2023-06-20

申请号：US17152956

申请日：2021-01-20

Applicant: Raytheon Company

Inventor： Matthew Thomas Dejarld ,  John P. Bettencourt ,  Adam Lyle Moldawer ,  Kenneth A. Wilson

IPC: H01L29/778 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L21/285

CPC classification number: H01L29/7786 ,  H01L21/28593 ,  H01L29/401 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462

Abstract: A high electron mobility transistor (HEMT) includes a substrate; a source on the substrate; a drain on the substrate spaced from the source; and a gate between the source and the drain, wherein the gate has a stem contacting the substrate, the stem having a source side surface and a drain side surface, wherein a source side angle is defined between the source side surface and an upper planar surface of the substrate and a drain side angle is defined between the drain side surface and the upper planar surface of the substrate, and wherein the source side angle and the drain side angle are asymmetric. Methods for making the HEMT are also disclosed.

公开(公告)号：US20220231154A1

公开(公告)日：2022-07-21

申请号：US17152956

申请日：2021-01-20

Applicant: Raytheon Company

Inventor： Matthew Thomas Dejarld ,  John P. Bettencourt ,  Adam Lyle Moldawer ,  Kenneth A. Wilson

IPC: H01L29/778 ,  H01L29/66

Abstract: A high electron mobility transistor (HEMT) includes a substrate; a source on the substrate; a drain on the substrate spaced from the source; and a gate between the source and the drain, wherein the gate has a stem contacting the substrate, the stem having a source side surface and a drain side surface, wherein a source side angle is defined between the source side surface and an upper planar surface of the substrate and a drain side angle is defined between the drain side surface and the upper planar surface of the substrate, and wherein the source side angle and the drain side angle are asymmetric. Methods for making the HEMT are also disclosed.

公开(公告)号：US11038030B2

公开(公告)日：2021-06-15

申请号：US16846902

申请日：2020-04-13

Applicant: Raytheon Company

Inventor： Christopher J. MacDonald ,  Kenneth A. Wilson ,  Kamal Tabatabaie Alavi ,  Adrian D. Williams

IPC: H01L29/40 ,  H01L29/778 ,  H01L21/311 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L23/31

Abstract: A Field Effect Transistor (FET) having a source, drain, and gate disposed laterally along a surface of a semiconductor and a field plate structure: having one end connected to the source; and having a second end disposed between the gate and the drain and separated from the drain by a gap. A dielectric structure is disposed over the semiconductor, having: a first portion disposed under the second end of the field plate structure; and, a second, thinner portion under the gap.

公开(公告)号：US20200243652A1

公开(公告)日：2020-07-30

申请号：US16846902

申请日：2020-04-13

Applicant: Raytheon Company

Inventor： Christopher J. MacDonald ,  Kenneth A. Wilson ,  Kamal Tabatabaie Alavi ,  Adrian D. Williams

IPC: H01L29/40 ,  H01L23/31 ,  H01L29/778 ,  H01L29/66 ,  H01L21/311 ,  H01L29/205 ,  H01L29/20

Abstract: A Field Effect Transistor (FET) having a source, drain, and gate disposed laterally along a surface of a semiconductor and a field plate structure: having one end connected to the source; and having a second end disposed between the gate and the drain and separated from the drain by a gap. A dielectric structure is disposed over the semiconductor, having: a first portion disposed under the second end of the field plate structure; and, a second, thinner portion under the gap.