公开(公告)号：US20230055905A1

公开(公告)日：2023-02-23

申请号：US17408040

申请日：2021-08-20

Applicant: Raytheon Company

Inventor： John A. Logan ,  Clay T. Long ,  Adam E. Peczalski

IPC: H03H9/17 ,  H03H9/02 ,  H03H9/13 ,  H03H3/02

Abstract: A bulk acoustic wave (BAW) resonator includes a piezoelectric layer oriented so that an N-polar surface forms a frontside surface that faces away from the substrate while a metal-polar surface forms the backside surface and faces toward the substrate. A process for the manufacture of a bulk acoustic wave (BAW) resonator includes orienting a piezoelectric layer on a substrate so that an N-polar surface forms a frontside surface that faces away from the substrate while a metal-polar surface forms the backside surface and faces toward the substrate; etching a via though the backside of the substrate to the metal-polar surface of the piezoelectric layer; and removing etch residue from a sidewall of the resonator cavity.

公开(公告)号：US11942919B2

公开(公告)日：2024-03-26

申请号：US17145665

申请日：2021-01-11

Applicant: Raytheon Company

Inventor： John A. Logan ,  Jason C. Soric ,  Adam E. Peczalski ,  Brian D. Schultz ,  Eduardo M. Chumbes

IPC: H03H9/02 ,  H03H3/04 ,  H03H9/17 ,  H03H3/02

CPC classification number: H03H9/02133 ,  H03H3/04 ,  H03H9/02031 ,  H03H9/02102 ,  H03H9/174 ,  H03H9/176 ,  H03H2003/023 ,  H03H2003/0407

Abstract: A strain compensated heterostructure comprising a substrate comprising silicon carbide material; a first epitaxial layer comprising single-crystal aluminum nitride material formed on a top surface of the substrate; a second epitaxial layer formed on the first epitaxial layer opposite the top surface of the substrate, the second epitaxial layer comprising single-crystal scandium aluminum nitride material; and a third epitaxial layer formed on the second epitaxial layer opposite the first epitaxial layer, the third layer comprising single-crystal aluminum nitride material.

公开(公告)号：US20220224306A1

公开(公告)日：2022-07-14

申请号：US17145665

申请日：2021-01-11

Applicant: Raytheon Company

Inventor： John A. Logan ,  Jason C. Soric ,  Adam E. Peczalski ,  Brian D. Schultz ,  Eduardo M. Chumbes

IPC: H03H9/02 ,  H03H3/04 ,  H03H9/17

Abstract: A strain compensated heterostructure comprising a substrate comprising silicon carbide material; a first epitaxial layer comprising single-crystal aluminum nitride material formed on a top surface of the substrate; a second epitaxial layer formed on the first epitaxial layer opposite the top surface of the substrate, the second epitaxial layer comprising single-crystal scandium aluminum nitride material; and a third epitaxial layer formed on the second epitaxial layer opposite the first epitaxial layer, the third layer comprising single-crystal aluminum nitride material.