Interlayer exchange coupling logic cells

    公开(公告)号:US11101800B1

    公开(公告)日:2021-08-24

    申请号:US17006819

    申请日:2020-08-29

    Abstract: An NAND or NOR logic device has multiple layers of ferromagnetic material separated from each other by non-magnetic layers of electrically conductive material of atomic thickness, sufficient to generate anti-magnetic response in a magnetized layer. The anti-magnetic response in a layer below a layer magnetized with a polarity is summed in a region which is coupled to an output, the output generating at least one of a NAND, or NOR logic function on applied input magnetization.

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