公开(公告)号：US11552242B2

公开(公告)日：2023-01-10

申请号：US17225785

申请日：2021-04-08

Applicant: Regents of the University of Minnesota

Inventor： Duarte José Pereira de Sousa ,  Cesar Octavio Ascencio ,  Jian-Ping Wang ,  Tony Low

IPC: G11C11/18 ,  H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/14 ,  G11C11/16 ,  H01L43/10

Abstract: In some examples, a device includes a magnetic tunnel junction including a first Weyl semimetal layer, a second Weyl semimetal layer, and a dielectric layer positioned between the first and second Weyl semimetal layers. The magnetic tunnel junction may have a large tunnel magnetoresistance ratio, which may be greater than five hundred percent or even greater than one thousand percent.

公开(公告)号：US20220328757A1

公开(公告)日：2022-10-13

申请号：US17225785

申请日：2021-04-08

Applicant: Regents of the University of Minnesota

Inventor： Duarte José Pereira de Sousa ,  Cesar Octavio Ascencio ,  Jian-Ping Wang ,  Tony Low

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10 ,  H01L43/14 ,  G11C11/16 ,  G11C11/18

Abstract: In some examples, a device includes a magnetic tunnel junction including a first Weyl semimetal layer, a second Weyl semimetal layer, and a dielectric layer positioned between the first and second Weyl semimetal layers. The magnetic tunnel junction may have a large tunnel magnetoresistance ratio, which may be greater than five hundred percent or even greater than one thousand percent.