公开(公告)号：US20240402400A1

公开(公告)日：2024-12-05

申请号：US18733569

申请日：2024-06-04

Applicant: Regents of the University of Minnesota ,  University of Notre Dame du Lac

Inventor： Seungjun Lee ,  Dongjea Seo ,  Sang Hyun Park ,  Tony Low ,  Steven J. Koester ,  Rehan Younas ,  Christopher Hinkle

IPC: G02B5/00

Abstract: Approaches to stack monolayer transition metal dichalcogenides (TMD) materials to develop near-perfect light absorbers (NPLAs) with only two atomic layers of TMD. Stacking TMDs may result in interlayer coupling with undesirable light absorbing behavior. The NPLAs of this disclosure stacks monolayer TMDs in such a way as to minimize TMD interlayer coupling, thus preserving TMD strong band nesting properties. Examples of approaches in this disclosure control the interlayer coupling by, for example, (a) twisted TMD bi-layers and (b) adding a buffer layer, e.g., a TMD/buffer layer/TMD tri-layer heterostructure. The NPLAs of this disclosure use the band nesting effect in TMDs, combined with a Salisbury screen geometry, to demonstrate NPLAs using only two or three uniform atomic layers of TMDs.

公开(公告)号：US20240319413A1

公开(公告)日：2024-09-26

申请号：US18400780

申请日：2023-12-29

Applicant: Regents of the University of Minnesota

Inventor： Sang-Hyun Oh ,  In-Ho Lee ,  Tony Low

IPC: G02B5/00 ,  G01N21/25 ,  G02B6/12 ,  G02B6/122

CPC classification number: G02B5/008 ,  G02B6/1226 ,  G01N2021/258 ,  G02B2006/12166 ,  G02F2203/10

Abstract: The subject matter of this specification can be embodied in, among other things, a graphene plasmon resonator that includes a planar patterned layer having a collection of electrically conductive segments, and a collection of dielectric segments, each dielectric segment defined between a corresponding pair of the electrically conductive segments, a graphene layer substantially parallel to the planar patterned layer and overlapping the collection of electrically conductive segments, and a planar dielectric layer between the planar patterned layer and the graphene layer.

公开(公告)号：US11885985B2

公开(公告)日：2024-01-30

申请号：US16894314

申请日：2020-06-05

Applicant: REGENTS OF THE UNIVERSITY OF MINNESOTA

Inventor： Sang-Hyun Oh ,  In-Ho Lee ,  Tony Low

IPC: G02B5/00 ,  G02B6/122 ,  G02B6/12 ,  G01N21/25

CPC classification number: G02B5/008 ,  G02B6/1226 ,  G01N2021/258 ,  G02B2006/12166 ,  G02F2203/10

Abstract: The subject matter of this specification can be embodied in, among other things, a graphene plasmon resonator that includes a planar patterned layer having a collection of electrically conductive segments, and a collection of dielectric segments, each dielectric segment defined between a corresponding pair of the electrically conductive segments, a graphene layer substantially parallel to the planar patterned layer and overlapping the collection of electrically conductive segments, and a planar dielectric layer between the planar patterned layer and the graphene layer.

公开(公告)号：US20220328757A1

公开(公告)日：2022-10-13

申请号：US17225785

申请日：2021-04-08

Applicant: Regents of the University of Minnesota

Inventor： Duarte José Pereira de Sousa ,  Cesar Octavio Ascencio ,  Jian-Ping Wang ,  Tony Low

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10 ,  H01L43/14 ,  G11C11/16 ,  G11C11/18

Abstract: In some examples, a device includes a magnetic tunnel junction including a first Weyl semimetal layer, a second Weyl semimetal layer, and a dielectric layer positioned between the first and second Weyl semimetal layers. The magnetic tunnel junction may have a large tunnel magnetoresistance ratio, which may be greater than five hundred percent or even greater than one thousand percent.

公开(公告)号：US20240172565A1

公开(公告)日：2024-05-23

申请号：US18496019

申请日：2023-10-27

Applicant: Regents of the University of Minnesota

Inventor： Jian-Ping Wang ,  Tony Low ,  Yifei Yang ,  Seungjun Lee

IPC: H10N50/20 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

CPC classification number: H10N50/20 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

Abstract: A device which includes a free layer and a current channel. The free layer has a configurable magnetization state. The current channel includes a low-symmetry crystal with only one mirror plane. The low-symmetry material has relatively large unconventional spin Hall effect (SHE). A current through the current channel applies a spin-orbit torque that sets the magnetization state of the free layer.

公开(公告)号：US11552242B2

公开(公告)日：2023-01-10

申请号：US17225785

申请日：2021-04-08

Applicant: Regents of the University of Minnesota

Inventor： Duarte José Pereira de Sousa ,  Cesar Octavio Ascencio ,  Jian-Ping Wang ,  Tony Low

IPC: G11C11/18 ,  H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/14 ,  G11C11/16 ,  H01L43/10

Abstract: In some examples, a device includes a magnetic tunnel junction including a first Weyl semimetal layer, a second Weyl semimetal layer, and a dielectric layer positioned between the first and second Weyl semimetal layers. The magnetic tunnel junction may have a large tunnel magnetoresistance ratio, which may be greater than five hundred percent or even greater than one thousand percent.