Photodetectors
    1.
    发明授权

    公开(公告)号:US11688820B2

    公开(公告)日:2023-06-27

    申请号:US17066735

    申请日:2020-10-09

    CPC classification number: H01L31/1085 H01L31/028 H01L31/022416 H01L31/1808

    Abstract: The subject matter of this specification can be embodied in, among other things, a photodetector that includes a semiconductor substrate, a semiconductor annulus on a planar face of the semiconductor substrate, and a metal layer on the semiconductor substrate, wherein the metal layer comprises a first region surrounding the semiconductor annulus and comprises a second region filling an interior region to the semiconductor annulus, and the metal layer in the first region forms a Schottky junction with the semiconductor ring.

    Photodetectors
    2.
    发明申请

    公开(公告)号:US20210111298A1

    公开(公告)日:2021-04-15

    申请号:US17066735

    申请日:2020-10-09

    Abstract: The subject matter of this specification can be embodied in, among other things, a photodetector that includes a semiconductor substrate, a semiconductor annulus on a planar face the semiconductor substrate, and a metal layer on the semiconductor substrate, wherein the metal layer comprises a first region surrounding the semiconductor annulus and comprises a second region filling an interior region to the semiconductor annulus, and the metal layer in the first region forms a Schottky junction with the semiconductor ring.

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