摘要:
A method for classifying semiconductor components by their performance characteristics includes reading an identifier associated with a component and storing, in conjunction with the identifier, first and second performances values for that component. These performance values represent the component's achieved operating speed at each of two different temperatures. The component is then allocated to a speed category on the basis of the first and second performance values.
摘要:
A method for replacing defective memory cells of a random access memory device of a data processing apparatus, in which, during the operation of the data processing apparatus, a defective memory cell is replaced by a replacement memory cell in the random access memory device by using a control instruction.
摘要:
A method for integrating imperfect semiconductor memory devices having functional and defective memory cells into a data processing apparatus. The defective memory cells are assigned defect addresses or defect address ranges. Before a memory access of the data processing apparatus is carried out, the address of the memory access is compared with the defect addresses or defect address ranges and is recoded in the event of correspondence.
摘要:
A method is provided for storing data in a memory device having memory cells arranged in memory cell rows and memory cell columns. The method can include a step for providing redundant memory cells in the memory device. The method can also include a step for localizing defective cells. Further, the method can include a step of accessing the redundant memory cells by means of a predeterminable access mode. The method can also include a step of bypassing defective memory cells of the memory device in a manner dependent on the predeterminable access mode during operation of the memory device for accessing redundant memory cells and for replacement by redundant memory cells. Further, the method can include a step for providing redundant memory cells for storing additional information describing a defect correction.
摘要:
The present invention relates to an interconnect structure for an integrated circuit (1) having a first interconnect (B1; B1′; B1″), which is composed of a plurality of interconnect sections (A11-A16; A11′-A16′; A11″-A14″) lying in a first and a second interconnect plane (M0, M1); and a second interconnect (B2; B2′; B2″), which runs adjacent to the first interconnect (B1; B1′; B1″) and which is composed of a plurality of interconnect sections (A21-A25; A21′-A25′; A21″-A23″) lying in the first and second interconnect planes (M0, M1); the first and second interconnects (B1; B1′; B1″; B2; B2′; B2″) being offset with respect to one another in the longitudinal direction in such a way that the interconnect sections (A12, A14, A16; A12′, A14′, A16′; A12″, A14″) of the first interconnect (B1; B1′; B1″) which lie in the first interconnect plane (M0) run at least in sections beside the interconnect sections (A22, A24; A22′; A24′; A21″, A23″) of the second interconnect (B2; B2′; B2″) which lie in the second interconnection plane (M1), and that the interconnect sections (A11, A13, A15; A11′, A13′, A15′; A11″, A13″) of the first interconnect (B1; B1′; B1″) which lie in the second interconnect plane (M1) run at least in sections beside the interconnect sections (A21, A23, A25; A21′, A23′, A25′; A22″) of the second interconnect (B2; B2′; B2″) which lie in the first interconnect plane (M0). The invention also provides a corresponding fabrication method.
摘要:
According to one embodiment, a dynamic memory is provided. The dynamic memory can include a memory matrix having a plurality of memory cells arranged in rows and columns. The memory cells in a row can be connected by in each case one of a plurality of word lines. The memory cells in a column can be connected by in each case one of a plurality of bit lines. The dynamic memory can also include a sense amplifier for reading data from the memory cells via the plurality of bit lines. Further, the dynamic memory can include a row address decoder and a column address decoder for generating memory-internal address in a manner dependent on a memory-external address signal. The dynamic memory can also include a sequence control device for cyclically generating refresh addresses for carrying for carrying out a refresh operation of the memory cells.
摘要:
Headbox for a machine to produce a fiber web, in particular a paper, cardboard or tissue web from at least one fibrous suspension, having a headbox nozzle comprising an upper nozzle wall and a lower nozzle wall, as well as two side walls tapering to form an outlet, and having an inner chamber through which the fibrous suspension flows in flow direction during operation of headbox, whereby on upper nozzle wall of headbox nozzle a baffle is arranged on the outlet side which is movable by way of several elements and which extends across machine width, and which has a baffle protrusion and a baffle immersion depth and which has at least two surfaces—an upstream ramp surface and a subsequent main surface contacted by a fibrous suspension during operation of headbox. The inventive headbox is characterized in that between ramp surface of baffle and main surface of baffle at least one refraction surface which is in contact during operation of headbox with a fibrous suspension is provided on baffle.
摘要:
The invention relates to a headbox which comprises a feed device feeding the at least one fiber suspension, a perforated distribution pipe plate arranged immediately downstream thereof and having a plurality of channels arranged in lines and columns, an intermediate channel arranged downstream thereof, extending over the width of the headbox and having a plurality of means for dosing a fluid in partial fluid streams to the at least one fiber suspension in a preferably adjustable/controlled manner, the means being spaced apart from each other in the width direction of the headbox and the individual means comprising a plurality of dosing channels having respective dosing channel openings and an opening center line, arriving at different levels and being connected to a common supply channel. The headbox further comprises a downstream turbulence generator having a plurality of flow channels arranged in lines and columns and a headbox nozzle which is directly contiguous to the turbulence generator and which has a nozzle gap. The headbox according to the invention has a system pressure loss which is substantially composed of a first pressure loss between the feed device and the intermediate channel and a second pressure loss in the turbulence generator, the second pressure loss and the first pressure loss being in a ratio ranging from 8:1 to 1:1, preferably from 4:1 to 1:1, particularly from 2:1 to 1:1.
摘要:
A system for testing semiconductor devices is disclosed. In one embodiment, the test system being configured to be electrically connected via parallel wiring paths to a plurality of contact pins of a number of devices under test. The test system having at least one signal distribution matrix arranged in the wiring path to provide signals for testing and/or power supply to the devices.
摘要:
The test method, integrated circuit and test system embodiments disclosed herein relate to testing at least one integrated circuit which uses an internal operating clock and has a first number of address pins, a second number of command pins and an address generation circuit which receives at least one encoded address information item using a third number of the address pins, which is smaller than the first number, and provides the other address pins as a fourth number of free address pins, where at least one first command is transferred using the command pins and at least one second command is transferred using at least one portion of the fourth number of the address pins from a test apparatus to the integrated circuit using a test clock which has a lower rate than the internal operating clock.