公开(公告)号：US06496958B1

公开(公告)日：2002-12-17

申请号：US09299979

申请日：1999-04-27

申请人： Reinhold Ott ,  Herbert Lammering ,  Heinrich Ollendorf

发明人： Reinhold Ott ,  Herbert Lammering ,  Heinrich Ollendorf

IPC分类号： G06F1750

CPC分类号： G06T7/0004 ,  G01N21/93 ,  G01N21/9501 ,  G06T2207/30148 ,  H01L22/26

摘要： In accordance with the present invention, a method, which may be implemented by employing a program storage device, for determining yield loss for a device includes the steps of determining killing probabilities corresponding to values of inspection parameters based on historic inspection information, determining defects on the device and ordering the defects by classifying the defects according to the inspection parameters. The defects adopt the killing probabilities associated with the same values of the inspection parameters. The method further includes the step of calculating a predicted yield loss based on the defects and the adopted killing probabilities. The method further includes the step of applying statistical process control to the predicted yield loss for all in-line inspection (process) steps.

摘要翻译： 根据本发明，可以通过使用程序存储装置来实现用于确定设备的产量损失的方法包括以下步骤：基于历史检查信息确定与检查参数的值相对应的杀伤概率，确定缺陷 通过根据检查参数对缺陷进行分类，排除缺陷。 缺陷采用与检验参数相同值相关的杀伤概率。 该方法还包括基于缺陷和采用的杀伤概率来计算预测的产量损失的步骤。 该方法还包括将统计过程控制应用于所有在线检验（处理）步骤的预测产量损失的步骤。

公开(公告)号：US07300875B2

公开(公告)日：2007-11-27

申请号：US10777608

申请日：2004-02-11

申请人： Heinrich Ollendorf ,  Stacey Cabral ,  Robert Fuller

发明人： Heinrich Ollendorf ,  Stacey Cabral ,  Robert Fuller

IPC分类号： H01L21/302

CPC分类号： H01L21/02074 ,  H01L21/32136 ,  H01L21/7684

摘要： Metal residue on a semiconductor surface resulting from metal chemical mechanical polishing (“CMP”) process are eradicated using a dry clean process. The dry cleaning uniformly removes or substantially eliminates metal residue from the surface of the semiconductor. An unintended metal short that may be present due to the residue may thereby be eliminated by adjusting the dry cleaning process based on a type of dry cleaning material, and type and a thickness of the residue.

摘要翻译： 使用干洗工艺消除了金属化学机械抛光（“CMP”）工艺产生的半导体表面上的金属残留物。 干洗可均匀地去除或基本上从半导体表面去除金属残留物。 由于残留物可能存在的意外的金属短路因此可以通过基于干式清洁材料的类型和残余物的类型和厚度调节干洗方法而被消除。

公开(公告)号：US20080092921A1

公开(公告)日：2008-04-24

申请号：US11926578

申请日：2007-10-29

申请人： Heinrich Ollendorf ,  Stacey Cabral ,  Robert Fuller

发明人： Heinrich Ollendorf ,  Stacey Cabral ,  Robert Fuller

IPC分类号： C25F3/12

CPC分类号： H01L21/02074 ,  H01L21/32136 ,  H01L21/7684

摘要： Metal residue on a semiconductor surface resulting from metal chemical mechanical polishing (“CMP”) process are eradicated using a dry clean process. The dry cleaning uniformly removes or substantially eliminates metal residue from the surface of the semiconductor. An unintended metal short that may be present due to the residue may thereby be eliminated by adjusting the dry cleaning process based on a type of dry cleaning material, and type and a thickness of the residue.

摘要翻译： 使用干洗工艺消除了金属化学机械抛光（“CMP”）工艺产生的半导体表面上的金属残留物。 干洗可均匀地去除或基本上消除半导体表面的金属残留物。 由于残留物可能存在的意外的金属短路因此可以通过基于干式清洁材料的类型和残余物的类型和厚度调节干洗过程而被消除。

公开(公告)号：US07772113B2

公开(公告)日：2010-08-10

申请号：US11926578

申请日：2007-10-29

申请人： Heinrich Ollendorf ,  Stacey Cabral ,  Robert Fuller

发明人： Heinrich Ollendorf ,  Stacey Cabral ,  Robert Fuller

IPC分类号： H01L21/4763

CPC分类号： H01L21/02074 ,  H01L21/32136 ,  H01L21/7684

摘要： Metal residue on a semiconductor surface resulting from metal chemical mechanical polishing (“CMP”) process are eradicated using a dry clean process. The dry cleaning uniformly removes or substantially eliminates metal residue from the surface of the semiconductor. An unintended metal short that may be present due to the residue may thereby be eliminated by adjusting the dry cleaning process based on a type of dry cleaning material, and type and a thickness of the residue.

摘要翻译： 使用干洗工艺消除了金属化学机械抛光（“CMP”）工艺产生的半导体表面上的金属残留物。 干洗可均匀地去除或基本上消除半导体表面的金属残留物。 由于残留物可能存在的意外的金属短路因此可以通过基于干式清洁材料的类型和残余物的类型和厚度调节干洗方法而被消除。

公开(公告)号：US20100040983A1

公开(公告)日：2010-02-18

申请号：US12191492

申请日：2008-08-14

申请人： Heinrich Ollendorf ,  Thomas Zell ,  Michael Kubis ,  Steffen Schmidt ,  Elke Hietschold

发明人： Heinrich Ollendorf ,  Thomas Zell ,  Michael Kubis ,  Steffen Schmidt ,  Elke Hietschold

IPC分类号： G03F7/20

CPC分类号： G03F1/72

摘要： A method of manufacturing integrated circuits includes determining a process-induced displacement (e.g., a stress-induced displacement) between primary structures on a substrate and providing a photomask with mask features assigned to the primary structures. The distances between the mask features are set such that the process-induced displacement is compensated.

摘要翻译： 制造集成电路的方法包括确定衬底上的主要结构之间的过程引起的位移（例如，应力引起的位移），并提供具有分配给主要结构的掩模特征的光掩模。 掩模特征之间的距离被设置为使得处理引起的位移被补偿。

公开(公告)号：US20050227471A1

公开(公告)日：2005-10-13

申请号：US10777608

申请日：2004-02-11

申请人： Heinrich Ollendorf ,  Stacey Cabral ,  Robert Fuller

发明人： Heinrich Ollendorf ,  Stacey Cabral ,  Robert Fuller

IPC分类号： H01L21/02 ,  H01L21/302 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/768

CPC分类号： H01L21/02074 ,  H01L21/32136 ,  H01L21/7684

摘要： Metal residue on a semiconductor surface resulting from metal chemical mechanical polishing (“CMP”) process are eradicated using a dry clean process. The dry cleaning uniformly removes or substantially eliminates metal residue from the surface of the semiconductor. An unintended metal short that may be present due to the residue may thereby be eliminated by adjusting the dry cleaning process based on a type of dry cleaning material, and type and a thickness of the residue.

摘要翻译： 使用干洗工艺消除了金属化学机械抛光（“CMP”）工艺产生的半导体表面上的金属残留物。 干洗可均匀地去除或基本上消除半导体表面的金属残留物。 由于残留物可能存在的意外的金属短路因此可以通过基于干式清洁材料的类型和残余物的类型和厚度调节干洗方法而被消除。