专利检索 ap:("Rempei Nakata" OR "Nobuhide Yamada" OR "Hideshi Miyajima" OR "Akihiro Kojima" OR "Takahiko Kurosawa" OR "Eiji Hayashi" OR "Youngsoon Seo" OR "Atsushi Shiota" OR "Kinji Yamada") AND inv:"Youngsoon Seo" 第 1 页

1.

发明授权
Method of forming insulating film and process for producing semiconductor device 有权

公开(公告)号：US06558747B2

公开(公告)日：2003-05-06

申请号：US10014593

申请日：2001-12-14

申请人： Rempei Nakata , Nobuhide Yamada , Hideshi Miyajima , Akihiro Kojima , Takahiko Kurosawa , Eiji Hayashi , Youngsoon Seo , Atsushi Shiota , Kinji Yamada

发明人： Rempei Nakata , Nobuhide Yamada , Hideshi Miyajima , Akihiro Kojima , Takahiko Kurosawa , Eiji Hayashi , Youngsoon Seo , Atsushi Shiota , Kinji Yamada

IPC分类号： B05D379397

CPC分类号： C08G77/16 , C09D183/06 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , Y10T428/31663

摘要： A method of forming an insulating film which includes the steps of: dissolving in a solvent a first and second polymer which each comprise methylpolysiloxane as the main component and one of which has a weight average molecular weight at least 10 times that of the other to thereby prepare a chemical solution; applying the chemical solution to a semiconductor substrate to form a coating film; and heat-treating the coating film to thereby form an organosilicon oxide film. The weight-average molecular weight of the first polymer is preferably at least 100 times that of the second polymer. Thus, an insulating organosilicon oxide film having a low dielectric constant and high cracking resistance is formed from a coating fluid.