摘要:
A polarization beam splitter and combiner and a polarization insensitive modulating and switching method and apparatus. In one aspect of the present invention, the disclosed apparatus a first optical waveguide disposed in a semiconductor material layer. A second optical waveguide is also disposed in the semiconductor material layer. An insulating region is disposed between the first and second optical waveguides to provide a coupling region in the semiconductor material layer between the first and second optical waveguides. The coupling region has a first coupling length for a first polarization mode of an optical beam directed through one of the first and second optical waveguides into the coupling region. The coupling region has a second coupling length for a second polarization mode of the optical beam.
摘要:
A tunable Bragg grating method and apparatus. In one aspect of the present invention, a method according to an embodiment of the present invention includes directing an optical beam into a first end of an optical path having the first end and a second end disposed in a semiconductor substrate, reflecting a first portion of the optical beam having a first center wavelength back out from the first end of the optical path and tuning the optical path to reflect a second portion of the optical beam having a second center wavelength back out from the first end of the optical path. In one embodiment, the Bragg grating is tuned with a heater used to adjust a temperature of the semiconductor substrate. In another embodiment, charge in charge modulated regions along the optical path is modulated to tune the Bragg grating.
摘要:
A Raman ring resonator based laser and wavelength converter method and apparatus. In one aspect of the present invention, the disclosed method includes directing a first optical beam of a first wavelength and a first power level into a first ring resonator defined in a semiconductor material. Emission of a second optical beam of a second wavelength is caused in the first ring resonator by propagating the first optical beam around the first ring resonator. The first power level is sufficient to cause the emission of the second optical beam. The first optical beam is directed out of the first ring resonator after a round trip of the first optical beam around the first ring resonator. The second optical beam is recirculated around the first ring resonator to further stimulate the emission of the second optical beam in the first ring resonator.
摘要:
A semiconductor-based laser tuning method and apparatus. In one aspect of the present invention, an apparatus according to an embodiment of the present invention includes a gain medium disposed in a semiconductor substrate. A laser cavity is disposed in the semiconductor substrate and is optically coupled to the gain medium. A first reflector defines one end of the laser cavity. The first reflector includes a first tunable Bragg grating disposed in the semiconductor substrate. The first tunable Bragg grating includes a first plurality of silicon and polysilicon interfaces along the semiconductor substrate such that there is a first plurality of perturbations of a refractive index along the Bragg grating. The first tunable Bragg grating selectively reflects light having a tunable center wavelength so as to emit light through stimulated emission having the tunable center wavelength in the laser cavity. A second reflector defines an other end of the laser cavity.
摘要:
A semiconductor-based tunable add/drop method and apparatus. In one aspect of the present invention, a method according to an embodiment of the present invention includes splitting a first optical beam having multiple wavelengths into second and third optical beams with a first 3 dB optical coupler disposed in a semiconductor substrate. Portions of the second and third optical beams having a tunable wavelength are reflected back to the first 3 dB optical coupler with first and second pluralities of silicon and polysilicon interfaces, respectively, disposed along the semiconductor substrate. In another embodiment, the portions of the second and third optical beams having a tunable wavelength are reflected back to the first 3 dB optical coupler with first and second pluralities of modulated charged regions. Portions of the second and third optical beams not reflected are directed to a second 3 dB optical coupler disposed in the semiconductor substrate. The portions of the second and third optical beams not reflected are combined into a fourth optical beam with the second 3 dB optical coupler.
摘要:
A device with optical switching between multiple layers of a semiconductor die is disclosed. In one aspect of the present invention, the disclosed apparatus includes a first semiconductor material layer of a semiconductor die. The first semiconductor material layer has a first optical waveguide. A second semiconductor material layer is also included in the semiconductor die. The second semiconductor material layer has a second optical waveguide. An insulating layer is disposed between the first and second semiconductor material layers such that there is an evanescent coupling between the first and second semiconductor material layers. There are modulated charge layers proximate to the insulating layer such that a coupling length of the evanescent coupling is controlled in response to the modulated charge layers.
摘要:
A polarization beam splitter and combiner and a polarization insensitive modulating and switching method and apparatus. In one aspect of the present invention, the disclosed apparatus a first optical waveguide disposed in a semiconductor material layer. A second optical waveguide is also disposed in the semiconductor material layer. An insulating region is disposed between the first and second optical waveguides to provide a coupling region in the semiconductor material layer between the first and second optical waveguides. The coupling region has a first coupling length for a first polarization mode of an optical beam directed through one of the first and second optical waveguides into the coupling region. The coupling region has a second coupling length for a second polarization mode of the optical beam.
摘要:
A tunable Bragg grating method and apparatus. In one aspect of the present invention, a method according to an embodiment of the present invention includes directing an optical beam into a first end of an optical path having the first end and a second end disposed in a semiconductor substrate, reflecting a first portion of the optical beam having a first center wavelength back out from the first end of the optical path and tuning the optical path to reflect a second portion of the optical beam having a second center wavelength back out from the first end of the optical path. In one embodiment, the Bragg grating is tuned with a heater used to adjust a temperature of the semiconductor substrate. In another embodiment, charge in charge modulated regions along the optical path is modulated to tune the Bragg grating.
摘要:
A device with optical switching between multiple layers of a semiconductor die is disclosed. In one aspect of the present invention, the disclosed apparatus includes a first semiconductor material layer of a semiconductor die. The first semiconductor material layer has a first optical waveguide. A second semiconductor material layer is also included in the semiconductor die. The second semiconductor material layer has a second optical waveguide. An insulating layer is disposed between the first and second semiconductor material layers such that there is an evanescent coupling between the first and second semiconductor material layers. There are modulated charge layers proximate to the insulating layer such that a coupling length of the evanescent coupling is controlled in response to the modulated charge layers.
摘要:
An apparatus and method for modulating a phase of optical beam. In one embodiment, an apparatus according to embodiments of the present invention includes a first region of semiconductor material disposed in a second region of semiconductor material. An insulating region is disposed between the first and second regions of semiconductor material defining a plurality of interfaces between the insulating region and the first and second regions of semiconductor material. An angle of incidence between an optical beam and the plurality of interfaces is substantially equal to Brewster's angle. A plurality of charge modulated regions proximate to the plurality of interfaces in the first and second regions of semiconductor are included such that the optical beam directed through the plurality of interfaces and the plurality of charge modulated regions is phase shifted in response to the plurality of charge modulated regions.