Method and apparatus for Raman ring resonator based laser/wavelength converter
    1.
    发明授权
    Method and apparatus for Raman ring resonator based laser/wavelength converter 有权
    用于拉曼环谐振器的激光/波长转换器的方法和装置

    公开(公告)号:US07046714B2

    公开(公告)日:2006-05-16

    申请号:US10659009

    申请日:2003-09-10

    IPC分类号: H01S3/083

    摘要: A Raman ring resonator based laser and wavelength converter method and apparatus. In one aspect of the present invention, the disclosed method includes directing a first optical beam of a first wavelength and a first power level into a first ring resonator defined in a semiconductor material. Emission of a second optical beam of a second wavelength is caused in the first ring resonator by propagating the first optical beam around the first ring resonator. The first power level is sufficient to cause the emission of the second optical beam. The first optical beam is directed out of the first ring resonator after a round trip of the first optical beam around the first ring resonator. The second optical beam is recirculated around the first ring resonator to further stimulate the emission of the second optical beam in the first ring resonator.

    摘要翻译: 一种拉曼环形谐振器的激光和波长转换器的方法和装置。 在本发明的一个方面,所公开的方法包括将第一波长和第一功率电平的第一光束引导到限定在半导体材料中的第一环形谐振器中。 通过在第一环形谐振器周围传播第一光束,在第一环形谐振器中产生第二波长的第二光束的发射。 第一功率电平足以引起第二光束的发射。 在第一光束围绕第一环形谐振器的往返之后,第一光束被引导出第一环形谐振器。 第二光束围绕第一环形谐振器再循环,以进一步刺激第一环形谐振器中的第二光束的发射。

    Method and apparatus for tuning a laser with a Bragg grating in a semiconductor substrate
    2.
    发明授权
    Method and apparatus for tuning a laser with a Bragg grating in a semiconductor substrate 有权
    用于在半导体衬底中用布拉格光栅调谐激光的方法和装置

    公开(公告)号:US06853671B2

    公开(公告)日:2005-02-08

    申请号:US09967445

    申请日:2001-09-28

    摘要: A semiconductor-based laser tuning method and apparatus. In one aspect of the present invention, an apparatus according to an embodiment of the present invention includes a gain medium disposed in a semiconductor substrate. A laser cavity is disposed in the semiconductor substrate and is optically coupled to the gain medium. A first reflector defines one end of the laser cavity. The first reflector includes a first tunable Bragg grating disposed in the semiconductor substrate. The first tunable Bragg grating includes a first plurality of silicon and polysilicon interfaces along the semiconductor substrate such that there is a first plurality of perturbations of a refractive index along the Bragg grating. The first tunable Bragg grating selectively reflects light having a tunable center wavelength so as to emit light through stimulated emission having the tunable center wavelength in the laser cavity. A second reflector defines an other end of the laser cavity.

    摘要翻译: 一种基于半导体的激光调谐方法和装置。 在本发明的一个方面中,根据本发明实施例的装置包括设置在半导体衬底中的增益介质。 激光腔设置在半导体衬底中并与光学耦合到增益介质。 第一反射器限定激光腔的一端。 第一反射器包括设置在半导体衬底中的第一可调谐布拉格光栅。 第一可调谐布拉格光栅包括沿着半导体衬底的第一多个硅和多晶硅界面,使得沿着布拉格光栅具有第一多个折射率扰动。 第一可调谐布拉格光栅选择性地反射具有可调谐中心波长的光,以便通过激光腔中具有可调中心波长的受激发射发光。 第二反射器限定激光腔的另一端。

    Method and apparatus for adding/droping optical signals in a semiconductor substrate
    3.
    发明授权
    Method and apparatus for adding/droping optical signals in a semiconductor substrate 有权
    用于在半导体衬底中加/减光信号的方法和装置

    公开(公告)号:US06856732B2

    公开(公告)日:2005-02-15

    申请号:US09967365

    申请日:2001-09-28

    摘要: A semiconductor-based tunable add/drop method and apparatus. In one aspect of the present invention, a method according to an embodiment of the present invention includes splitting a first optical beam having multiple wavelengths into second and third optical beams with a first 3 dB optical coupler disposed in a semiconductor substrate. Portions of the second and third optical beams having a tunable wavelength are reflected back to the first 3 dB optical coupler with first and second pluralities of silicon and polysilicon interfaces, respectively, disposed along the semiconductor substrate. In another embodiment, the portions of the second and third optical beams having a tunable wavelength are reflected back to the first 3 dB optical coupler with first and second pluralities of modulated charged regions. Portions of the second and third optical beams not reflected are directed to a second 3 dB optical coupler disposed in the semiconductor substrate. The portions of the second and third optical beams not reflected are combined into a fourth optical beam with the second 3 dB optical coupler.

    摘要翻译: 一种基于半导体的可调加/减方法和装置。 在本发明的一个方面中,根据本发明实施例的方法包括:将具有多个波长的第一光束分成第二和第三光束,其中第一个3dB光耦合器设置在半导体衬底中。 具有可调谐波长的第二和第三光束的部分被分别沿着半导体衬底设置的第一和第二多个硅和多晶硅接口反射回到第一3d分量光耦合器。 在另一个实施例中,具有可调谐波长的第二和第三光束的部分被第一和第二多个调制带电区域反射回到第一3d分量光耦合器。 未反射的第二和第三光束的部分被引导到设置在半导体衬底中的第二3dB光耦合器。 未反射的第二和第三光束的部分与第二3dB光耦合器组合成第四光束。

    Polarization insensitive method and apparatus for switching and modulating an optical beam
    4.
    发明授权
    Polarization insensitive method and apparatus for switching and modulating an optical beam 失效
    用于切换和调制光束的偏振不敏感方法和装置

    公开(公告)号:US06999664B2

    公开(公告)日:2006-02-14

    申请号:US10603379

    申请日:2003-06-24

    IPC分类号: G02F1/295 G02B6/27

    摘要: A polarization beam splitter and combiner and a polarization insensitive modulating and switching method and apparatus. In one aspect of the present invention, the disclosed apparatus a first optical waveguide disposed in a semiconductor material layer. A second optical waveguide is also disposed in the semiconductor material layer. An insulating region is disposed between the first and second optical waveguides to provide a coupling region in the semiconductor material layer between the first and second optical waveguides. The coupling region has a first coupling length for a first polarization mode of an optical beam directed through one of the first and second optical waveguides into the coupling region. The coupling region has a second coupling length for a second polarization mode of the optical beam.

    摘要翻译: 偏振分束器和组合器以及偏振不敏感的调制和切换方法和装置。 在本发明的一个方面,所公开的装置设置在半导体材料层中的第一光波导。 第二光波导也设置在半导体材料层中。 绝缘区域设置在第一和第二光波导之间,以在第一和第二光波导之间的半导体材料层中提供耦合区域。 耦合区域具有用于通过第一和第二光波导中的一个引导到耦合区域中的光束的第一偏振模式的第一耦合长度。 耦合区域具有用于光束的第二偏振模式的第二耦合长度。

    Method and apparatus for tuning a Bragg grating in a semiconductor substrate
    5.
    发明授权
    Method and apparatus for tuning a Bragg grating in a semiconductor substrate 失效
    用于调谐半导体衬底中的布拉格光栅的方法和装置

    公开(公告)号:US06947616B2

    公开(公告)日:2005-09-20

    申请号:US10335765

    申请日:2003-01-02

    摘要: A tunable Bragg grating method and apparatus. In one aspect of the present invention, a method according to an embodiment of the present invention includes directing an optical beam into a first end of an optical path having the first end and a second end disposed in a semiconductor substrate, reflecting a first portion of the optical beam having a first center wavelength back out from the first end of the optical path and tuning the optical path to reflect a second portion of the optical beam having a second center wavelength back out from the first end of the optical path. In one embodiment, the Bragg grating is tuned with a heater used to adjust a temperature of the semiconductor substrate. In another embodiment, charge in charge modulated regions along the optical path is modulated to tune the Bragg grating.

    摘要翻译: 可调谐布拉格光栅方法和装置。 在本发明的一个方面,根据本发明实施例的方法包括将光束引导到具有第一端的光路的第一端和设置在半导体衬底中的第二端,反射第一部分 所述光束具有从光路的第一端返回的第一中心波长并调谐光路以将具有第二中心波长的光束的第二部分从光路的第一端反射出去。 在一个实施例中,布拉格光栅用用于调节半导体衬底的温度的加热器调谐。 在另一个实施例中,沿着光路的电荷调制区域的电荷被调制以调谐布拉格光栅。

    Three dimensional semiconductor based optical switching device
    6.
    发明授权
    Three dimensional semiconductor based optical switching device 有权
    基于三维半导体的光开关器件

    公开(公告)号:US07437026B2

    公开(公告)日:2008-10-14

    申请号:US10947633

    申请日:2004-09-22

    IPC分类号: G02F1/295

    CPC分类号: G02F1/025

    摘要: A device with optical switching between multiple layers of a semiconductor die is disclosed. In one aspect of the present invention, the disclosed apparatus includes a first semiconductor material layer of a semiconductor die. The first semiconductor material layer has a first optical waveguide. A second semiconductor material layer is also included in the semiconductor die. The second semiconductor material layer has a second optical waveguide. An insulating layer is disposed between the first and second semiconductor material layers such that there is an evanescent coupling between the first and second semiconductor material layers. There are modulated charge layers proximate to the insulating layer such that a coupling length of the evanescent coupling is controlled in response to the modulated charge layers.

    摘要翻译: 公开了一种在半导体管芯的多层之间进行光切换的器件。 在本发明的一个方面,所公开的装置包括半导体管芯的第一半导体材料层。 第一半导体材料层具有第一光波导。 第二半导体材料层也包括在半导体管芯中。 第二半导体材料层具有第二光波导。 绝缘层设置在第一和第二半导体材料层之间,使得在第一和第二半导体材料层之间存在ev逝耦合。 存在靠近绝缘层的调制电荷层,使得响应于调制的电荷层来控制ev逝耦合的耦合长度。

    Electrically pumped semiconductor evanescent laser
    10.
    发明申请
    Electrically pumped semiconductor evanescent laser 审中-公开
    电泵浦半导体ev逝激光器

    公开(公告)号:US20080002929A1

    公开(公告)日:2008-01-03

    申请号:US11479459

    申请日:2006-06-30

    IPC分类号: G02B6/12 G02B6/26 H01S3/097

    摘要: An apparatus and method electrically pumping a hybrid evanescent laser. For one example, an apparatus includes an optical waveguide disposed in silicon. An active semiconductor material is disposed over the optical waveguide defining an evanescent coupling interface between the optical waveguide and the active semiconductor material such that an optical mode to be guided by the optical waveguide overlaps both the optical waveguide and the active semiconductor material. A current injection path is defined through the active semiconductor material and at least partially overlapping the optical mode such that light is generated in response to electrical pumping of the active semiconductor material in response to current injection along the current injection path at least partially overlapping the optical mode.

    摘要翻译: 一种电泵浦混合ev逝激光的装置和方法。 作为一个示例,设备包括设置在硅中的光波导。 有源半导体材料设置在光波导上,限定光波导和有源半导体材料之间的渐逝耦合接口,使得由光波导引导的光学模式与光波导和有源半导体材料重叠。 通过有源半导体材料限定电流注入路径,并且至少部分地与光学模式重叠,使得响应于沿着沿着电流注入路径的电流注入而响应于有源半导体材料的电泵浦产生光而至少部分地与光学 模式。