公开(公告)号：US09906165B2

公开(公告)日：2018-02-27

申请号：US15194624

申请日：2016-06-28

Applicant: Renesas Electronics Corporation

Inventor： Kuniharu Muto ,  Koji Bando ,  Takamitsu Kanazawa ,  Ryo Kanda ,  Akihiro Tamura ,  Hirobumi Minegishi

IPC: H01L23/495 ,  H01L23/04 ,  H01L27/06 ,  H02M7/00 ,  H02M7/537 ,  H02M7/5387

CPC classification number: H02M7/537 ,  H01L23/04 ,  H01L23/3107 ,  H01L23/49541 ,  H01L27/0664 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/181 ,  H02M7/003 ,  H02M7/53875 ,  H01L2924/00012 ,  H01L2924/00

Abstract: Reliability of a semiconductor device is improved. A third semiconductor chip on which a control circuit is formed, and a first semiconductor chip of a plurality of IGBT chips are electrically connected via a high-side relay board. That is, the first semiconductor chip and the third semiconductor chip are electrically connected via a first wire, a high-side relay board and a second wire. Similarly, the third semiconductor chip on which the control circuit is formed and a second semiconductor chip of a plurality of IGBT chips are electrically connected via a low-side relay board. That is, the second semiconductor chip and the third semiconductor chip are electrically connected via the first wire, the low-side relay board and the second wire.