公开(公告)号：US20130214339A1

公开(公告)日：2013-08-22

申请号：US13750928

申请日：2013-01-25

Applicant: Renesas Electronics Corporation

Inventor： Yoshinori Tanaka ,  Masahiro Shimizu ,  Hideaki Arima ,  Sadayuki MORITA

IPC: H01L27/06

CPC classification number: H01L27/0629 ,  H01L27/10814 ,  H01L27/10817 ,  H01L27/10844 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/91

Abstract: A semiconductor device, including a memory cell region and a peripheral circuit region, comprises an insulating film, having an upper surface formed on a major surface of a semiconductor substrate to extend from a memory cell region to a peripheral circuit region thereof. A capacitor lower electrode is formed in the memory cell region to upwardly extend beyond the upper surface of the insulating film on the major surface of the semiconductor substrate. A capacitor upper electrode is formed on the capacitor lower electrode through a dielectric film, to extend onto the upper surface of the insulating film. The capacitor lower electrode includes a capacitor lower electrode part having a top surface and a bottom surface. The upper surface of the insulating film is located between the top and bottom surfaces of the capacitor lower electrode part.

Abstract translation: 包括存储单元区域和外围电路区域的半导体器件包括绝缘膜，其具有形成在半导体衬底的主表面上的上表面，以从存储单元区域延伸到其外围电路区域。 在存储单元区域中形成电容器下电极，以向上延伸超过半导体衬底的主表面上的绝缘膜的上表面。 电容器上电极通过电介质膜形成在电容器下电极上，延伸到绝缘膜的上表面。 电容器下电极包括具有顶表面和底表面的电容器下电极部分。 绝缘膜的上表面位于电容器下电极部的顶表面和底表面之间。

公开(公告)号：US08759891B2

公开(公告)日：2014-06-24

申请号：US13750928

申请日：2013-01-25

Applicant: Renesas Electronics Corporation

Inventor： Yoshinori Tanaka ,  Masahiro Shimizu ,  Hideaki Arima

IPC: H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC classification number: H01L27/0629 ,  H01L27/10814 ,  H01L27/10817 ,  H01L27/10844 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/91

Abstract: A semiconductor device, having a memory cell region and a peripheral circuit region, includes an insulating film, having an upper surface formed on a major surface of a semiconductor substrate to extend from a memory cell region to a peripheral circuit region thereof. A capacitor lower electrode is formed in the memory cell region to upwardly extend beyond the upper surface of the insulating film on the major surface of the semiconductor substrate. A capacitor upper electrode is formed on the capacitor lower electrode through a dielectric film, to extend onto the upper surface of the insulating film. The capacitor lower electrode includes a capacitor lower electrode part having a top surface and a bottom surface. The upper surface of the insulating film is located between the top and bottom surfaces of the capacitor lower electrode part.

Abstract translation: 具有存储单元区域和外围电路区域的半导体器件包括绝缘膜，其具有形成在半导体衬底的主表面上的上表面，以从存储单元区域延伸到其外围电路区域。 在存储单元区域中形成电容器下电极，以向上延伸超过半导体衬底的主表面上的绝缘膜的上表面。 电容器上电极通过电介质膜形成在电容器下电极上，延伸到绝缘膜的上表面。 电容器下电极包括具有顶表面和底表面的电容器下电极部分。 绝缘膜的上表面位于电容器下电极部的顶表面和底表面之间。